Invention Application
US20160064270A1 METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES INCLUDING AIR GAP SPACERS
审中-公开
制造包括空气间隙的半导体器件的方法
- Patent Title: METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES INCLUDING AIR GAP SPACERS
- Patent Title (中): 制造包括空气间隙的半导体器件的方法
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Application No.: US14939439Application Date: 2015-11-12
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Publication No.: US20160064270A1Publication Date: 2016-03-03
- Inventor: EUN-OK LEE , Nam-Gun KIM , Gyuhwan OH , Heesook PARK , Hyun-Jung LEE , Kyungho JANG
- Applicant: EUN-OK LEE , Nam-Gun KIM , Gyuhwan OH , Heesook PARK , Hyun-Jung LEE , Kyungho JANG
- Priority: KR10-2013-0104386 20130830
- Main IPC: H01L21/768
- IPC: H01L21/768
Abstract:
A spacer covering a sidewall of a contact plug includes a relatively more damaged first portion and a relatively less damaged second portion. An interface of the first and second portions of the spacer is spaced apart from a metal suicide layer of the contact plug. Thus reliability of the semiconductor device may be improved. Related fabrication methods are also described.
Public/Granted literature
- US09318379B2 Methods of manufacturing semiconductor devices including air gap spacers Public/Granted day:2016-04-19
Information query
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