公开(公告)号：US09318379B2

公开(公告)日：2016-04-19

申请号：US14939439

申请日：2015-11-12

Applicant: Eun-Ok Lee ,  Nam-Gun Kim ,  Gyuhwan Oh ,  Heesook Park ,  Hyun-Jung Lee ,  Kyungho Jang

Inventor： Eun-Ok Lee ,  Nam-Gun Kim ,  Gyuhwan Oh ,  Heesook Park ,  Hyun-Jung Lee ,  Kyungho Jang

IPC: H01L21/768

CPC classification number: H01L23/5329 ,  H01L21/764 ,  H01L21/7682 ,  H01L21/76831 ,  H01L21/76889 ,  H01L21/76895 ,  H01L21/76897 ,  H01L23/53209 ,  H01L27/10814 ,  H01L27/10823 ,  H01L27/10855 ,  H01L27/10876 ,  H01L27/10888 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A spacer covering a sidewall of a contact plug includes a relatively more damaged first portion and a relatively less damaged second portion. An interface of the first and second portions of the spacer is spaced apart from a metal silicide layer of the contact plug. Thus reliability of the semiconductor device may be improved. Related fabrication methods are also described.

Abstract translation: 覆盖接触塞的侧壁的间隔件包括相对更受损的第一部分和相对较少受损的第二部分。 间隔物的第一和第二部分的界面与接触塞的金属硅化物层间隔开。 因此，可以提高半导体器件的可靠性。 还描述了相关的制造方法。

公开(公告)号：US08294220B2

公开(公告)日：2012-10-23

申请号：US12685265

申请日：2010-01-11

Applicant: Hyun-Su Kim ,  Kwang-Jin Moon ,  Sang-Woo Lee ,  Eun-Ok Lee ,  Ho-Ki Lee

Inventor： Hyun-Su Kim ,  Kwang-Jin Moon ,  Sang-Woo Lee ,  Eun-Ok Lee ,  Ho-Ki Lee

IPC: H01L23/50

CPC classification number: H01L21/76855 ,  H01L21/28556 ,  H01L21/76843

Abstract: Contacts having different characteristics may be created by forming a first silicide layer over a first device region of a substrate, and then forming a second silicide layer over a second device region while simultaneously further forming the first silicide layer. A first contact hole may be formed in a dielectric layer over a first device region of a substrate. A silicide layer may then be formed in the first contact hole. A second contact hole may be formed after the first contact hole and silicide layer is formed. A second silicidation may then be performed in the first and second contact holes.

Abstract translation: 可以通过在衬底的第一器件区域上形成第一硅化物层，然后在第二器件区域上形成第二硅化物层，同时进一步形成第一硅化物层来产生具有不同特性的触点。 可以在衬底的第一器件区域上的介电层中形成第一接触孔。 然后可以在第一接触孔中形成硅化物层。 可以在形成第一接触孔和硅化物层之后形成第二接触孔。 然后可以在第一和第二接触孔中执行第二硅化。

公开(公告)号：US07749840B2

公开(公告)日：2010-07-06

申请号：US11757906

申请日：2007-06-04

Applicant: Jong-Ho Yun ,  Byung-Hee Kim ,  Dae-Yong Kim ,  Hyun-Su Kim ,  Eun-Ji Jung ,  Eun-Ok Lee

Inventor： Jong-Ho Yun ,  Byung-Hee Kim ,  Dae-Yong Kim ,  Hyun-Su Kim ,  Eun-Ji Jung ,  Eun-Ok Lee

IPC: H01L21/336 ,  H01L21/425 ,  H01L21/44

CPC classification number: H01L27/10885 ,  H01L27/10876

Abstract: A method of forming a buried interconnection includes removing a semiconductor substrate to form a groove in the semiconductor substrate. A metal layer is formed on inner walls of the groove using an electroless deposition technique. A silicidation process is applied to the substrate having the metal layer, thereby forming a metal silicide layer on the inner walls of the groove.

Abstract translation: 形成掩埋布线的方法包括去除半导体衬底以在半导体衬底中形成凹槽。 使用无电沉积技术在凹槽的内壁上形成金属层。 对具有金属层的基板进行硅化处理，从而在槽的内壁上形成金属硅化物层。

公开(公告)号：US07587529B2

公开(公告)日：2009-09-08

申请号：US11649181

申请日：2007-01-03

Applicant: Eun-Ok Lee ,  Young-Mo Gu ,  Sang-Hyo Kim

Inventor： Eun-Ok Lee ,  Young-Mo Gu ,  Sang-Hyo Kim

IPC: G06F13/00

CPC classification number: G06F13/28

Abstract: Disclosed is a method for controlling a memory in a mobile communication system. The method includes receiving certain frame control information by a Data Receiver Block (DRB) from a MAP decoder, forming a burst descriptor by the DRB by using the frame control information, and transferring the burst descriptor to a Low Medium Access Control (LMAC), and allocating a memory by the LMAC based on bursts according to the burst descriptor.

Abstract translation: 公开了一种用于控制移动通信系统中的存储器的方法。 该方法包括：通过数据接收器块（DRB）从MAP解码器接收某些帧控制信息，由DRB通过使用帧控制信息形成脉冲串描述符，并将脉冲串描述符传送到低介质访问控制（LMAC） 以及根据脉冲串描述符基于脉冲串由LMAC分配存储器。

公开(公告)号：US20090191699A1

公开(公告)日：2009-07-30

申请号：US12276562

申请日：2008-11-24

Applicant: Eun-ji Jung ,  Dae-yong Kim ,  Gil-heyun Choi ,  Byung-hee Kim ,  Woong-hee Sohn ,  Hyun-su Kim ,  Jang-hee Lee ,  Eun-ok Lee ,  Jeong-gil Lee

Inventor： Eun-ji Jung ,  Dae-yong Kim ,  Gil-heyun Choi ,  Byung-hee Kim ,  Woong-hee Sohn ,  Hyun-su Kim ,  Jang-hee Lee ,  Eun-ok Lee ,  Jeong-gil Lee

IPC: H01L21/28

CPC classification number: H01L21/28052 ,  H01L29/66545

Abstract: A plurality of spaced-apart conductor structures is formed on a semiconductor substrate, each of the conductor structures including a conductive layer. Insulating spacers are formed on sidewalls of the conductor structures. An interlayer-insulating film that fills gaps between adjacent ones of the insulating spacers is formed. Portions of the interlayer-insulating layer are removed to expose upper surfaces of the conductive layers. Respective epilayers are grown on the respective exposed upper surfaces of the conductive layers and respective metal silicide layers are formed from the respective epilayers.

Abstract translation: 多个间隔开的导体结构形成在半导体衬底上，每个导体结构包括导电层。 绝缘垫片形成在导体结构的侧壁上。 形成填充相邻绝缘间隔件之间的间隙的层间绝缘膜。 去除层间绝缘层的一部分以暴露导电层的上表面。 相应的外延层在导电层的相应暴露的上表面上生长，并且各自的外延层形成各自的金属硅化物层。

公开(公告)号：US20090026618A1

公开(公告)日：2009-01-29

申请号：US12220527

申请日：2008-07-25

Applicant: Hyun-Su Kim ,  Daeyong Kim ,  Eun-Ok Lee ,  Byunghee Kim ,  Jang-Hee Lee ,  Eun-Ji Jung ,  Gilheyun Choi

Inventor： Hyun-Su Kim ,  Daeyong Kim ,  Eun-Ok Lee ,  Byunghee Kim ,  Jang-Hee Lee ,  Eun-Ji Jung ,  Gilheyun Choi

IPC: H01L21/768 ,  H01L23/48

CPC classification number: H01L21/76868 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76871 ,  H01L23/485 ,  H01L27/105 ,  H01L27/10885 ,  H01L27/10888 ,  H01L27/11521 ,  H01L27/11526 ,  H01L27/24 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In a method of forming a semiconductor device, and a semiconductor device formed according to the method, an insulating layer is provided on an underlying contact region of the semiconductor device. An opening is formed in the insulating layer to expose the underlying contact region. A seed layer is provided on sidewalls and a bottom of the opening, the seed layer comprising cobalt. A barrier layer of conductive material is provided in a lower portion of the opening, the seed layer being exposed on sidewalls of an upper portion of the opening. A metal layer is provided on the barrier layer in the opening to form an interlayer contact, the metal layer contacting the seed layer at the sidewalls of the upper portion of the opening.

Abstract translation: 在形成半导体器件的方法和根据该方法形成的半导体器件中，在半导体器件的下部接触区域上设置绝缘层。 在绝缘层中形成开口以露出下面的接触区域。 种子层设置在开口的侧壁和底部上，籽晶层包含钴。 导电材料的阻挡层设置在开口的下部，籽晶层暴露在开口上部的侧壁上。 金属层设置在开口中的阻挡层上以形成层间接触，金属层在开口上部的侧壁处与种子层接触。

公开(公告)号：US20070295995A1

公开(公告)日：2007-12-27

申请号：US11757906

申请日：2007-06-04

Applicant: Jong-Ho Yun ,  Byung-Hee Kim ,  Dae-Yong Kim ,  Hyun-Su Kim ,  Eun-Ji Jung ,  Eun-Ok Lee

Inventor： Jong-Ho Yun ,  Byung-Hee Kim ,  Dae-Yong Kim ,  Hyun-Su Kim ,  Eun-Ji Jung ,  Eun-Ok Lee

IPC: H01L27/10 ,  H01L21/44

CPC classification number: H01L27/10885 ,  H01L27/10876

Abstract: A method of forming a buried interconnection includes removing a semiconductor substrate to form a groove in the semiconductor substrate. A metal layer is formed on inner walls of the groove using an electroless deposition technique. A silicidation process is applied to the substrate having the metal layer, thereby forming a metal silicide layer on the inner walls of the groove.

Abstract translation: 形成掩埋布线的方法包括去除半导体衬底以在半导体衬底中形成凹槽。 使用无电沉积技术在凹槽的内壁上形成金属层。 对具有金属层的基板进行硅化处理，从而在槽的内壁上形成金属硅化物层。

公开(公告)号：US20070246783A1

公开(公告)日：2007-10-25

申请号：US11649890

申请日：2007-01-05

Applicant: Kwang-jin Moon ,  Hyun-su Kim ,  Sang-woo Lee ,  Ho-ki Lee ,  Eun-ok Lee ,  Sung-tae Kim

Inventor： Kwang-jin Moon ,  Hyun-su Kim ,  Sang-woo Lee ,  Ho-ki Lee ,  Eun-ok Lee ,  Sung-tae Kim

IPC: H01L29/78 ,  H01L21/336 ,  H01L21/44

CPC classification number: H01L29/66666 ,  H01L21/823475 ,  H01L21/823481 ,  H01L27/10823 ,  H01L27/10876 ,  H01L29/1037 ,  H01L29/42376 ,  H01L29/7827 ,  H01L29/7831

Abstract: A method of manufacturing a semiconductor device includes forming a pillar-shaped active region by etching a portion of a semiconductor substrate, forming a blocking film selectively exposing a sidewall of a lower portion of the pillar-shaped active region, and forming a bit-line selectively on the exposed sidewall of the lower portion of the pillar-shaped active region.

Abstract translation: 一种制造半导体器件的方法包括通过蚀刻半导体衬底的一部分形成柱状有源区，形成选择性地暴露柱状有源区的下部的侧壁的阻挡膜，并形成位线 选择性地在柱状活性区域的下部的暴露的侧壁上。

公开(公告)号：US20070105358A1

公开(公告)日：2007-05-10

申请号：US11355112

申请日：2006-02-14

Applicant: Hyun-Su Kim ,  Kwang-Jin Moon ,  Sang-Woo Lee ,  Eun-Ok Lee ,  Ho-Ki Lee

Inventor： Hyun-Su Kim ,  Kwang-Jin Moon ,  Sang-Woo Lee ,  Eun-Ok Lee ,  Ho-Ki Lee

IPC: H01L21/44

CPC classification number: H01L21/76855 ,  H01L21/28556 ,  H01L21/76843

Abstract: Contacts having different characteristics may be created by forming a first silicide layer over a first device region of a substrate, and then forming a second silicide layer over a second device region while simultaneously further forming the first silicide layer. A first contact hole may be formed in a dielectric layer over a first device region of a substrate. A silicide layer may then be formed in the first contact hole. A second contact hole may be formed after the first contact hole and silicide layer is formed. A second silicidation may then be performed in the first and second contact holes.

Abstract translation: 可以通过在衬底的第一器件区域上形成第一硅化物层，然后在第二器件区域上形成第二硅化物层，同时进一步形成第一硅化物层来产生具有不同特性的触点。 可以在衬底的第一器件区域上的介电层中形成第一接触孔。 然后可以在第一接触孔中形成硅化物层。 可以在形成第一接触孔和硅化物层之后形成第二接触孔。 然后可以在第一和第二接触孔中执行第二硅化。

公开(公告)号：US20160064270A1

公开(公告)日：2016-03-03

申请号：US14939439

申请日：2015-11-12

Applicant: EUN-OK LEE ,  Nam-Gun KIM ,  Gyuhwan OH ,  Heesook PARK ,  Hyun-Jung LEE ,  Kyungho JANG

Inventor： EUN-OK LEE ,  Nam-Gun KIM ,  Gyuhwan OH ,  Heesook PARK ,  Hyun-Jung LEE ,  Kyungho JANG

IPC: H01L21/768

CPC classification number: H01L23/5329 ,  H01L21/764 ,  H01L21/7682 ,  H01L21/76831 ,  H01L21/76889 ,  H01L21/76895 ,  H01L21/76897 ,  H01L23/53209 ,  H01L27/10814 ,  H01L27/10823 ,  H01L27/10855 ,  H01L27/10876 ,  H01L27/10888 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A spacer covering a sidewall of a contact plug includes a relatively more damaged first portion and a relatively less damaged second portion. An interface of the first and second portions of the spacer is spaced apart from a metal suicide layer of the contact plug. Thus reliability of the semiconductor device may be improved. Related fabrication methods are also described.

Abstract translation: 覆盖接触塞的侧壁的间隔件包括相对更受损的第一部分和相对较少受损的第二部分。 间隔物的第一和第二部分的界面与接触塞的金属硅化物层间隔开。 因此，可以提高半导体器件的可靠性。 还描述了相关的制造方法。