Invention Application
- Patent Title: ESD SNAPBACK BASED CLAMP FOR FINFET
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Application No.: US14469155Application Date: 2014-08-26
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Publication No.: US20160064372A1Publication Date: 2016-03-03
- Inventor: Jagar SINGH , Andy WEI , Mahadeva Iyer NATARAJAN , Manjunatha PRABHU , Anil KUMAR
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L29/66 ; H01L29/78
Abstract:
There is set forth herein a field effect transistor (FET) configured as an ESD protection device. In one embodiment, the FET can be configured to operate in a snapback operating mode. The FET can include a semiconductor substrate, a gate formed on the substrate and a dummy gate formed on the substrate spaced apart from the gate.
Public/Granted literature
- US09349718B2 ESD snapback based clamp for finFET Public/Granted day:2016-05-24
Information query
IPC分类:
