Invention Application
- Patent Title: SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Patent Title (中): 半导体器件及其制造方法
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Application No.: US14634132Application Date: 2015-02-27
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Publication No.: US20160064474A1Publication Date: 2016-03-03
- Inventor: Dongwoo SUH
- Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Applicant Address: KR Daejeon
- Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Current Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Current Assignee Address: KR Daejeon
- Priority: KR10-2014-0112400 20140827
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L31/0352 ; H01L21/3105 ; H01L31/109 ; H01L31/18 ; H01L21/02 ; H01L29/165 ; H01L31/028

Abstract:
A semiconductor device includes: a substrate doped with a first conductive type; a first nanowire protruding on the substrate in a first direction and including a first core and a first shell; and an electrode being on the first nanowire and directly contacting a top surface of the first core, wherein the first shell covers a sidewall of the first core; the first shell includes a first semiconductor; and the first core includes a second semiconductor having a different bandgap than the first semiconductor.
Information query
IPC分类: