公开(公告)号：US20150155395A1

公开(公告)日：2015-06-04

申请号：US14339915

申请日：2014-07-24

Applicant: Electronics and Telecommunications Research Institute ,  THE REGENTS OF THE UNIVERSITY OF MICHIGAN

Inventor： Dongwoo SUH ,  Young Jun KIM ,  Wei LU ,  Lin CHEN

IPC: H01L29/872 ,  H01L29/06 ,  H01L29/16 ,  H01L29/66

CPC classification number: H01L29/872 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/413 ,  H01L29/66212

Abstract: Provided is a Schottky diode. The Schottky diode includes: a substrate; a core on the substrate; a metallic layer on the core; and a shell surrounding the core between the metallic layer and the substrate and adjusting a Fermi energy level of the core to form a Schottky junction between the core and the metallic layer.

Abstract translation: 提供了肖特基二极管。 肖特基二极管包括：基板; 基材上的核心; 芯上的金属层; 以及围绕所述金属层和所述基板之间的所述芯的外壳并且调节所述芯的费米能级以在所述芯和所述金属层之间形成肖特基结。

公开(公告)号：US20250169139A1

公开(公告)日：2025-05-22

申请号：US18945658

申请日：2024-11-13

Applicant: Electronics and Telecommunications Research Institute

Inventor： Sang Hoon KIM ,  Dongwoo SUH ,  Jeong Woo PARK ,  Minkyun SOHN ,  Seong Hyun LEE ,  Wangjoo LEE ,  Jinha KIM ,  Min-A PARK ,  Sun Kyu JUNG ,  Subin HEO

IPC: H01L29/66 ,  H01L21/8234 ,  H01L27/092 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/775 ,  H01L29/78 ,  H01L29/786

Abstract: Provided is a transistor device including: a substrate; a lower transistor positioned on the substrate and including a lower channel layer, a lower gate, and a lower source/drain region; an upper transistor positioned on the lower transistor and including an upper channel layer, an upper gate, and an upper source/drain region; and an inner spacer configured to insulate the lower transistor from the upper transistor, wherein the inner spacer may be formed by removing a portion of each of a first sacrificial layer and a second sacrificial layer, which are formed above and below the lower channel layer and the upper channel layer and have different Ge contents, to a depth according to a Ge content and then depositing an insulating material.

公开(公告)号：US20150287863A1

公开(公告)日：2015-10-08

申请号：US14677916

申请日：2015-04-02

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： JungWook LIM ,  Dongwoo SUH ,  Sun Jin YUN

IPC: H01L31/054

CPC classification number: H01L31/022466 ,  B32B2307/412 ,  B32B2457/12 ,  G02F1/0147 ,  H01L31/0547 ,  Y02E10/52

Abstract: Provided is a transparent solar cell including: a substrate; a first transparent electrode disposed on the substrate; a light absorption layer disposed on the first transparent electrode; a multi chromic layer disposed on the light absorption layer; and a second transparent electrode disposed on the multi chromic layer, and in which light is incident into the substrate and at least some of the incident light is converted into an electrical current in the light absorption layer to be able to provide heat to the multi chromic layer.

Abstract translation: 提供一种透明太阳能电池，包括：基板; 设置在所述基板上的第一透明电极; 设置在所述第一透明电极上的光吸收层; 设置在所述光吸收层上的多层铬层; 以及第二透明电极，其设置在所述多层上，并且其中光入射到所述衬底中，并且所述入射光中的至少一些被转换成所述光吸收层中的电流，以能够向所述多层铬提供热量 层。

公开(公告)号：US20240243159A1

公开(公告)日：2024-07-18

申请号：US18535731

申请日：2023-12-11

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Jeong Woo PARK ,  Sang Hoon KIM ,  Dongwoo SUH

IPC: H01L27/146

CPC classification number: H01L27/14649 ,  H01L27/14636 ,  H01L27/14683

Abstract: The present disclosure relates to an image sensor including a silicon substrate having a first conductivity type, and a read out integrated circuit (ROIC) and a photodetector disposed on the silicon substrate. The ROIC and the photodetector are spaced apart from each other in a first direction parallel to a top surface of the silicon substrate. The photodetector includes a first germanium pattern having the first conductivity type and a semiconductor pattern having a second conductivity type different from the first conductivity type, which are laminated in a direction perpendicular to the top surface of the silicon substrate. The first germanium pattern contacts the silicon substrate.

公开(公告)号：US20230402529A1

公开(公告)日：2023-12-14

申请号：US18327417

申请日：2023-06-01

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Sang Hoon KIM ,  Dongwoo SUH ,  JINHA KIM ,  Jeong Woo PARK ,  Seong Hyun LEE ,  Wangjoo LEE

IPC: H01L29/66 ,  H01L29/423 ,  H01L29/10 ,  H01L29/786

CPC classification number: H01L29/66545 ,  H01L29/66553 ,  H01L29/42392 ,  H01L29/1054 ,  H01L29/78696

Abstract: A method of manufacturing a semiconductor device is provided. The method includes forming alternating layers, where a silicon germanium layer and a silicon layer are alternately stacked, on a substrate, etching the alternating layers to form a fin structure protruding onto the substrate and then forming a silicon nitride film on a surface and a sidewall of each of the alternating layers having the fin structure, sequentially forming a dummy gate and a silicon oxide film on the alternating layers with the silicon nitride film therebetween and then forming a gate spacer on a sidewall of the dummy gate, etching the silicon nitride film upward exposed, and then, etching the alternating layers by using the silicon oxide film, and selectively forming an inner spacer in a sidewall of each of silicon germanium layers among the silicon germanium layers and silicon layers of the etched alternating layers.

公开(公告)号：US20140175510A1

公开(公告)日：2014-06-26

申请号：US14194723

申请日：2014-03-01

Applicant: Electronics and Telecommunications Research Institute

Inventor： Dongwoo SUH ,  Sang Hoon KIM ,  Gyungock KIM ,  JiHo JOO

IPC: H01L31/028

CPC classification number: H01L31/028 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/02667 ,  H01L31/103 ,  H01L31/1808 ,  H01L31/1872 ,  Y02E10/50 ,  Y02P70/521

Abstract: Provided is a germanium photodetector having a germanium epitaxial layer formed without using a buffer layer and a method of fabricating the same. In the method, an amorphous germanium layer is formed on a substrate. The amorphous germanium layer is heated up to a high temperature to form a crystallized germanium layer. A germanium epitaxial layer is formed on the crystallized germanium layer.

Abstract translation: 提供了具有不使用缓冲层形成的锗外延层的锗光电检测器及其制造方法。 在该方法中，在基板上形成无定形锗层。 将非晶锗层加热至高温以形成结晶的锗层。 在结晶的锗层上形成锗外延层。

公开(公告)号：US20220359749A1

公开(公告)日：2022-11-10

申请号：US17564688

申请日：2021-12-29

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Seong Hyun LEE ,  Dongwoo SUH ,  Sang Hoon KIM ,  Jeong Woo PARK ,  Tae Moon ROH

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/45 ,  H01L27/12

Abstract: Provided is a semiconductor device. The semiconductor device includes a semiconductor substrate including monocrystalline silicon or polycrystalline silicon, a first insulating layer on the semiconductor substrate, the first insulating layer including a local region in which a portion of an upper surface of the first insulating layer is recessed, a channel layer provided in the local region of the first insulating layer, a silicide provided on one side surface of the channel layer, a control gate provided on the channel layer, a gate insulating film provided between the channel layer and the control gate, and a polarity control gate arranged so as to overlap an interface between the channel layer and the silicide, wherein the polarity control gate is spaced apart from the control gate, and the channel layer includes monocrystalline silicon.

公开(公告)号：US20160064474A1

公开(公告)日：2016-03-03

申请号：US14634132

申请日：2015-02-27

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Dongwoo SUH

IPC: H01L29/06 ,  H01L31/0352 ,  H01L21/3105 ,  H01L31/109 ,  H01L31/18 ,  H01L21/02 ,  H01L29/165 ,  H01L31/028

CPC classification number: H01L29/068 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02653 ,  H01L29/0676 ,  H01L29/165 ,  H01L29/861 ,  H01L31/035227 ,  H01L31/102 ,  H01L31/109 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A semiconductor device includes: a substrate doped with a first conductive type; a first nanowire protruding on the substrate in a first direction and including a first core and a first shell; and an electrode being on the first nanowire and directly contacting a top surface of the first core, wherein the first shell covers a sidewall of the first core; the first shell includes a first semiconductor; and the first core includes a second semiconductor having a different bandgap than the first semiconductor.

Abstract translation: 半导体器件包括：掺杂有第一导电类型的衬底; 第一纳米线在第一方向上在基板上突出并且包括第一芯和第一壳; 并且电极位于第一纳米线上并且直接接触第一芯的顶表面，其中第一壳覆盖第一芯的侧壁; 第一壳包括第一半导体; 并且第一芯包括具有与第一半导体不同的带隙的第二半导体。