Invention Application
- Patent Title: LATERAL PiN DIODES AND SCHOTTKY DIODES
- Patent Title (中): 横向二极管和肖特基二极管
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Application No.: US14476185Application Date: 2014-09-03
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Publication No.: US20160064475A1Publication Date: 2016-03-03
- Inventor: Natalie B. FEILCHENFELD , Vibhor JAIN , Qizhi LIU
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L21/762 ; H01L27/08 ; H01L29/66 ; H01L29/868 ; H01L29/872
Abstract:
Lateral PiN diodes and Schottky diodes with low parasitic capacitance and variable breakdown voltage structures and methods of manufacture are disclosed. The structure includes a diode with breakdown voltage determined by a dimension between p- and n-terminals formed in an i-region above a substrate.
Public/Granted literature
- US09947573B2 Lateral PiN diodes and schottky diodes Public/Granted day:2018-04-17
Information query
IPC分类:
