Invention Application
- Patent Title: STRESS IN TRIGATE DEVICES USING COMPLIMENTARY GATE FILL MATERIALS
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Application No.: US14938812Application Date: 2015-11-11
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Publication No.: US20160064562A1Publication Date: 2016-03-03
- Inventor: Titash Rakshit , Martin Giles , Ravi Pillarisetty , Jack T. Kavalieros
- Applicant: Intel Corporation
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L27/12
Abstract:
Embodiments relate to an improved tri-gate device having gate metal fills, providing compressive or tensile stress upon at least a portion of the tri-gate transistor, thereby increasing the carrier mobility and operating frequency. Embodiments also contemplate method for use of the improved tri-gate device.
Public/Granted literature
- US09450092B2 Stress in trigate devices using complimentary gate fill materials Public/Granted day:2016-09-20
Information query
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