公开(公告)号：US09450092B2

公开(公告)日：2016-09-20

申请号：US14938812

申请日：2015-11-11

Applicant: Intel Corporation

Inventor： Titash Rakshit ,  Martin Giles ,  Ravi Pillarisetty ,  Jack T. Kavalieros

IPC: H01L21/70 ,  H01L29/78 ,  H01L21/8238 ,  H01L29/66 ,  H01L21/8234 ,  H01L27/12

CPC classification number: H01L29/7845 ,  H01L21/8234 ,  H01L21/823807 ,  H01L21/823821 ,  H01L21/823828 ,  H01L21/823842 ,  H01L21/823878 ,  H01L21/845 ,  H01L27/0924 ,  H01L27/1211 ,  H01L29/0653 ,  H01L29/495 ,  H01L29/66795 ,  H01L29/7831 ,  H01L29/785

Abstract: Embodiments relate to an improved tri-gate device having gate metal fills, providing compressive or tensile stress upon at least a portion of the tri-gate transistor, thereby increasing the carrier mobility and operating frequency. Embodiments also contemplate method for use of the improved tri-gate device.

公开(公告)号：US20160064562A1

公开(公告)日：2016-03-03

申请号：US14938812

申请日：2015-11-11

Applicant: Intel Corporation

Inventor： Titash Rakshit ,  Martin Giles ,  Ravi Pillarisetty ,  Jack T. Kavalieros

IPC: H01L29/78 ,  H01L27/12

CPC classification number: H01L29/7845 ,  H01L21/8234 ,  H01L21/823807 ,  H01L21/823821 ,  H01L21/823828 ,  H01L21/823842 ,  H01L21/823878 ,  H01L21/845 ,  H01L27/0924 ,  H01L27/1211 ,  H01L29/0653 ,  H01L29/495 ,  H01L29/66795 ,  H01L29/7831 ,  H01L29/785

Abstract: Embodiments relate to an improved tri-gate device having gate metal fills, providing compressive or tensile stress upon at least a portion of the tri-gate transistor, thereby increasing the carrier mobility and operating frequency. Embodiments also contemplate method for use of the improved tri-gate device.

公开(公告)号：US09806193B2

公开(公告)日：2017-10-31

申请号：US15250836

申请日：2016-08-29

Applicant: Intel Corporation

Inventor： Titash Rakshit ,  Martin Giles ,  Ravi Pillarisetty ,  Jack T. Kavalieros

IPC: H01L21/70 ,  H01L29/78 ,  H01L21/8238 ,  H01L29/66 ,  H01L21/8234 ,  H01L27/12 ,  H01L21/84 ,  H01L27/092 ,  H01L29/06 ,  H01L29/49

CPC classification number: H01L29/7845 ,  H01L21/8234 ,  H01L21/823807 ,  H01L21/823821 ,  H01L21/823828 ,  H01L21/823842 ,  H01L21/823878 ,  H01L21/845 ,  H01L27/0924 ,  H01L27/1211 ,  H01L29/0653 ,  H01L29/495 ,  H01L29/66795 ,  H01L29/7831 ,  H01L29/785

Abstract: Embodiments relate to an improved tri-gate device having gate metal fills, providing compressive or tensile stress upon at least a portion of the tri-gate transistor, thereby increasing the carrier mobility and operating frequency. Embodiments also contemplate method for use of the improved tri-gate device.