发明申请
- 专利标题： PROCESS GAS ENHANCEMENT FOR BEAM TREATMENT OF A SUBSTRATE
- 专利标题（中）： 用于处理基材的处理气体增强
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申请号： US14842416申请日： 2015-09-01
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公开(公告)号： US20160071734A1公开(公告)日： 2016-03-10
- 发明人: Michael Graf , Noel Russell , Matthew C. Gwinn , Allen J. Leith
- 申请人： TEL Epion Inc.
- 主分类号： H01L21/3065
- IPC分类号： H01L21/3065 ; H01J37/305 ; H01L21/311 ; H01J27/02
摘要：
A beam processing system and method of operating are described. In particular, the beam processing system includes a beam source having a nozzle assembly that is configured to introduce a primary gas through the nozzle assembly to a vacuum vessel in order to produce a gaseous beam, such as a gas cluster beam, and optionally, an ionizer positioned downstream from the nozzle assembly, and configured to ionize the gaseous beam to produce an ionized gaseous beam. The beam processing system further includes a process chamber within which a substrate is positioned for treatment by the gaseous beam, and a secondary gas source, wherein the secondary gas source includes a secondary gas supply system that delivers a secondary gas, and a secondary gas controller that operatively controls the flow of the secondary gas injected into the beam processing system downstream of the nozzle assembly.
公开/授权文献
- US09735019B2 Process gas enhancement for beam treatment of a substrate 公开/授权日：2017-08-15