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公开(公告)号：US20200066485A1
公开(公告)日：2020-02-27
申请号：US16665357
申请日：2019-10-28
Applicant: TEL Epion Inc.
Inventor： Matthew C. Gwinn , Martin D. Tabat , Kenneth Regan , Allen J. Leith , Michael Graf
IPC: H01J37/304 , H01J37/20 , H01J37/08 , H01J37/147
Abstract: An apparatus and method for processing a workpiece with a beam is described. The apparatus includes a vacuum chamber having a beam-line for forming a particle beam and treating a workpiece with the particle beam, and a scanner for translating the workpiece through the particle beam. The apparatus further includes a scanner control circuit coupled to the scanner, and configured to control a scan property of the scanner, and a beam control circuit coupled to at least one beam-line component, and configured to control the beam flux of the particle beam according to a duty cycle for switching between at least two different states during processing.
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公开(公告)号：US20180197715A1
公开(公告)日：2018-07-12
申请号：US15863732
申请日：2018-01-05
Applicant: TEL Epion Inc.
Inventor： Matthew C. Gwinn , Martin D. Tabat , Kenneth Regan , Allen J. Leith , Michael Graf
IPC: H01J37/304 , H01J37/20 , H01J37/08 , H01J37/147
Abstract: An apparatus and method for processing a workpiece with a beam is described. The apparatus includes a vacuum chamber having a beam-line for forming a particle beam and treating a workpiece with the particle beam, and a scanner for translating the workpiece through the particle beam. The apparatus further includes a scanner control circuit coupled to the scanner, and configured to control a scan property of the scanner, and a beam control circuit coupled to at least one beam-line component, and configured to control the beam flux of the particle beam according to a duty cycle for switching between at least two different states during processing.
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公开(公告)号：US20160071734A1
公开(公告)日：2016-03-10
申请号：US14842416
申请日：2015-09-01
Applicant: TEL Epion Inc.
Inventor： Michael Graf , Noel Russell , Matthew C. Gwinn , Allen J. Leith
IPC: H01L21/3065 , H01J37/305 , H01L21/311 , H01J27/02
CPC classification number: H01L21/3065 , H01J27/026 , H01J37/317 , H01J2237/006 , H01J2237/0812 , H01J2237/16 , H01J2237/31732 , H01J2237/3174 , H01L21/31116 , H01L21/32136
Abstract: A beam processing system and method of operating are described. In particular, the beam processing system includes a beam source having a nozzle assembly that is configured to introduce a primary gas through the nozzle assembly to a vacuum vessel in order to produce a gaseous beam, such as a gas cluster beam, and optionally, an ionizer positioned downstream from the nozzle assembly, and configured to ionize the gaseous beam to produce an ionized gaseous beam. The beam processing system further includes a process chamber within which a substrate is positioned for treatment by the gaseous beam, and a secondary gas source, wherein the secondary gas source includes a secondary gas supply system that delivers a secondary gas, and a secondary gas controller that operatively controls the flow of the secondary gas injected into the beam processing system downstream of the nozzle assembly.
Abstract translation: 描述了一种光束处理系统和操作方法。 特别地，光束处理系统包括具有喷嘴组件的光束源，喷嘴组件被配置为将初级气体通过喷嘴组件引入真空容器，以便产生诸如气体束束的气体束，并且可选地， 定位在喷嘴组件下游的离子发生器，并被配置为离子化气体束以产生离子化的气体束。 光束处理系统还包括处理室，其中定位用于由气体束进行处理的基板和二次气体源，其中二次气体源包括输送二次气体的二次气体供应系统和二次气体控制器 其可操作地控制注入喷嘴组件下游的光束处理系统中的二次气体的流动。
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公开(公告)号：US09735019B2
公开(公告)日：2017-08-15
申请号：US14842416
申请日：2015-09-01
Applicant: TEL Epion Inc.
Inventor： Michael Graf , Noel Russell , Matthew C. Gwinn , Allen J. Leith
IPC: H01L21/3065 , H01L27/02 , H01J37/305 , H01L21/311 , H01J27/02 , H01L21/3213 , H01J37/317
CPC classification number: H01L21/3065 , H01J27/026 , H01J37/317 , H01J2237/006 , H01J2237/0812 , H01J2237/16 , H01J2237/31732 , H01J2237/3174 , H01L21/31116 , H01L21/32136
Abstract: A beam processing system and method of operating are described. In particular, the beam processing system includes a beam source having a nozzle assembly that is configured to introduce a primary gas through the nozzle assembly to a vacuum vessel in order to produce a gaseous beam, such as a gas cluster beam, and optionally, an ionizer positioned downstream from the nozzle assembly, and configured to ionize the gaseous beam to produce an ionized gaseous beam. The beam processing system further includes a process chamber within which a substrate is positioned for treatment by the gaseous beam, and a secondary gas source, wherein the secondary gas source includes a secondary gas supply system that delivers a secondary gas, and a secondary gas controller that operatively controls the flow of the secondary gas injected into the beam processing system downstream of the nozzle assembly.
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公开(公告)号：US20150144786A1
公开(公告)日：2015-05-28
申请号：US14550417
申请日：2014-11-21
Applicant: TEL Epion Inc.
Inventor： Matthew C. Gwinn
CPC classification number: H01J37/30 , H01J37/08 , H01J2237/0812 , H01J2237/317
Abstract: A method and system for performing gas cluster ion beam (GCIB) etch processing of various materials is described. In particular, the GCIB etch processing includes using one or more molecular beams to optimize pressure at localized regions of the ion beam.
Abstract translation: 描述了用于进行各种材料的气体簇离子束（GCIB）蚀刻处理的方法和系统。 特别地，GCIB蚀刻处理包括使用一个或多个分子束来优化离子束局部区域处的压力。
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Patent Agency Ranking
公开(公告)号：US10861674B2
公开(公告)日：2020-12-08
申请号：US16665357
申请日：2019-10-28
Applicant: TEL Epion Inc.
Inventor： Matthew C. Gwinn , Martin D. Tabat , Kenneth Regan , Allen J. Leith , Michael Graf
IPC: H01J37/304 , H01J37/20 , H01J37/08 , H01J37/147
Abstract: An apparatus and method for processing a workpiece with a beam is described. The apparatus includes a vacuum chamber having a beam-line for forming a particle beam and treating a workpiece with the particle beam, and a scanner for translating the workpiece through the particle beam. The apparatus further includes a scanner control circuit coupled to the scanner, and configured to control a scan property of the scanner, and a beam control circuit coupled to at least one beam-line component, and configured to control the beam flux of the particle beam according to a duty cycle for switching between at least two different states during processing.
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公开(公告)号：US09343259B2
公开(公告)日：2016-05-17
申请号：US14815265
申请日：2015-07-31
Applicant: TEL Epion Inc.
Inventor： Matthew C. Gwinn , Avrum Freytsis , Robert K. Becker
IPC: H01J37/08 , H01J37/305
CPC classification number: H01J37/08 , H01J37/305 , H01J2237/006 , H01J2237/0206 , H01J2237/061 , H01J2237/0812 , H01J2237/0822 , H01J2237/3151
Abstract: A nozzle assembly used for performing gas cluster ion beam (GCIB) etch processing of various materials is described. In particular, the nozzle assembly includes two or more conical nozzles that are aligned such that they are both used to generate the same GCIB. The first conical nozzle may include the throat that initially forms the GCIB and the second nozzle may form a larger conical cavity that may be appended to the first conical nozzle. A transition region may be disposed between the two conical nozzles that may substantially cylindrical and slightly larger than the largest diameter of the first conical nozzle.
Abstract translation: 描述了用于进行各种材料的气体簇离子束（GCIB）蚀刻处理的喷嘴组件。 特别地，喷嘴组件包括两个或更多个锥形喷嘴，其被对准，使得它们都用于产生相同的GCIB。 第一锥形喷嘴可以包括最初形成GCIB的喉部，并且第二喷嘴可以形成可以附着到第一锥形喷嘴的更大的锥形空腔。 过渡区域可以设置在两个锥形喷嘴之间，其可以基本上圆柱形并稍微大于第一锥形喷嘴的最大直径。
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公开(公告)号：US20160042909A1
公开(公告)日：2016-02-11
申请号：US14815265
申请日：2015-07-31
Applicant: TEL Epion Inc.
Inventor： Matthew C. Gwinn , Avrum Freytsis , Robert K. Becker
IPC: H01J37/08 , H01J37/305
CPC classification number: H01J37/08 , H01J37/305 , H01J2237/006 , H01J2237/0206 , H01J2237/061 , H01J2237/0812 , H01J2237/0822 , H01J2237/3151
Abstract: A nozzle assembly used for performing gas cluster ion beam (GCIB) etch processing of various materials is described. In particular, the nozzle assembly includes two or more conical nozzles that are aligned such that they are both used to generate the same GCIB. The first conical nozzle may include the throat that initially forms the GCIB and the second nozzle may form a larger conical cavity that may be appended to the first conical nozzle. A transition region may be disposed between the two conical nozzles that may substantially cylindrical and slightly larger than the largest diameter of the first conical nozzle.
Abstract translation: 描述了用于进行各种材料的气体簇离子束（GCIB）蚀刻处理的喷嘴组件。 特别地，喷嘴组件包括两个或更多个锥形喷嘴，其被对准，使得它们都用于产生相同的GCIB。 第一锥形喷嘴可以包括最初形成GCIB的喉部，并且第二喷嘴可以形成可以附着到第一锥形喷嘴的更大的锥形空腔。 过渡区域可以设置在两个锥形喷嘴之间，其可以基本上圆柱形并稍微大于第一锥形喷嘴的最大直径。
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公开(公告)号：US09029808B2
公开(公告)日：2015-05-12
申请号：US14444791
申请日：2014-07-28
Applicant: TEL Epion Inc.
Inventor： Matthew C. Gwinn , Avrum Freytsis , Jerry Negrotti , Robert K. Becker
IPC: H01J37/20 , G21K5/08 , H01J37/317
CPC classification number: H01J37/20 , G21K5/08 , H01J37/317 , H01J2237/20228 , H01J2237/20235 , H01J2237/20278
Abstract: Disclosed are an apparatus, system, and method for scanning a substrate or other workpiece through a gas-cluster ion beam (GCIB), or any other type of ion beam. The workpiece scanning apparatus is configured to receive and hold a substrate for irradiation by the GCIB and to scan it through the GCIB in two directions using two movements: a reciprocating fast-scan movement, and a slow-scan movement. The slow-scan movement is actuated using a servo motor and a belt drive system, the belt drive system being configured to reduce the failure rate of the workpiece scanning apparatus. The apparatus further includes shields and other features for reducing process contamination resulting from scattering of the GCIB from the scanning apparatus.
Abstract translation: 公开了一种用于通过气体簇离子束（GCIB）或任何其它类型的离子束扫描衬底或其它工件的装置，系统和方法。 工件扫描装置被配置为接收和保持用于GCIB照射的基板，并且通过两次运动通过GCIB在两个方向上进行扫描：往复式快速扫描运动和慢扫描运动。 使用伺服电动机和皮带驱动系统来驱动缓慢扫描运动，所述皮带驱动系统被配置为降低工件扫描装置的故障率。 该装置还包括屏蔽件和其它特征，用于减少GCIB从扫描装置散射而产生的工艺污染。
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公开(公告)号：US09236221B2
公开(公告)日：2016-01-12
申请号：US14550417
申请日：2014-11-21
Applicant: TEL Epion Inc.
Inventor： Matthew C. Gwinn
CPC classification number: H01J37/30 , H01J37/08 , H01J2237/0812 , H01J2237/317
Abstract: A method and system for performing gas cluster ion beam (GCIB) etch processing of various materials is described. In particular, the GCIB etch processing includes using one or more molecular beams to optimize pressure at localized regions of the ion beam.
Abstract translation: 描述了用于进行各种材料的气体簇离子束（GCIB）蚀刻处理的方法和系统。 特别地，GCIB蚀刻处理包括使用一个或多个分子束来优化离子束局部区域处的压力。
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