发明申请
- 专利标题： CONFINED SEMI-METAL FIELD EFFECT TRANSISTOR
- 专利标题（中）： 限制半金属场效应晶体管
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申请号： US14625376申请日： 2015-02-18
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公开(公告)号： US20160071970A1公开(公告)日： 2016-03-10
- 发明人: Ryan M. Hatcher , Jorge A. Kittl , Robert C. Bowen
- 申请人： Samsung Electronics Co., Ltd.
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/06 ; H01L29/66
摘要：
Exemplary embodiments are disclosed for a semi-metal transistor, comprising: a semi-metal contact region adjacent to a metal contact; at least one semiconductor terminal; and a semi-metal transition region connected between the contact region and the semiconductor terminal that transitions from a substantially zero gap semi-metal beginning at an interface of the contact region into a semiconductor with an energy band gap towards the semiconductor terminal.
公开/授权文献
- US09431529B2 Confined semi-metal field effect transistor 公开/授权日：2016-08-30
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