Invention Application
- Patent Title: PRESSURE SENSOR AND MANUFACTURING METHOD OF THE SAME
- Patent Title (中): 压力传感器及其制造方法
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Application No.: US14485082Application Date: 2014-09-12
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Publication No.: US20160076959A1Publication Date: 2016-03-17
- Inventor: Jien-Ming Chen , Chin-Wen Huang , Chin-Hung Wang , Jing-Yuan Lin , Yu-Sheng Hsieh
- Applicant: Industrial Technology Research Institute
- Main IPC: G01L9/00
- IPC: G01L9/00 ; H04R31/00

Abstract:
A pressure sensor and a manufacturing method of the same are provided. The pressure sensor includes a substrate, a dielectric oxide layer, a first electrode, a dielectric connection layer, and a second electrode. The dielectric oxide layer is formed on the substrate. The first electrode is formed on the dielectric oxide layer. The dielectric connection layer is formed on the first electrode. The second electrode is formed on the dielectric connection layer. The second electrode comprises a patterned conductive layer and a dielectric layer. The patterned conductive layer has a plurality of holes, and the dielectric layer is formed on the patterned conductive layer and covers the inner walls of the plurality of holes. The first electrode, the dielectric connection layer, and the second electrode define a first chamber between the first electrode and the second electrode.
Public/Granted literature
- US09400224B2 Pressure sensor and manufacturing method of the same Public/Granted day:2016-07-26
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