Invention Application
US20160087033A1 SEMICONDUCTOR DEVICE HAVING LOCALIZED CHARGE BALANCE STRUCTURE AND METHOD
有权
具有本地化电荷平衡结构和方法的半导体器件
- Patent Title: SEMICONDUCTOR DEVICE HAVING LOCALIZED CHARGE BALANCE STRUCTURE AND METHOD
- Patent Title (中): 具有本地化电荷平衡结构和方法的半导体器件
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Application No.: US14930060Application Date: 2015-11-02
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Publication No.: US20160087033A1Publication Date: 2016-03-24
- Inventor: Jaume ROIG GUITART , Peter MOENS , Piet VANMEERBEEK
- Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Applicant Address: US AZ Phoenix
- Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee Address: US AZ Phoenix
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/10 ; H01L29/66
Abstract:
In one embodiment, a semiconductor device has a superjunction structure formed adjoining a low-doped n-type region. A low-doped p-type region is formed adjoining the superjunction structure above the low-doped n-type region and is configured to improve Eas characteristics. A body region is formed adjacent the low-doped p-type region and a control electrode structure is formed adjacent the body region for controlling a channel region within the body region.
Public/Granted literature
- US09412811B2 Semiconductor device having localized charge balance structure and method Public/Granted day:2016-08-09
Information query
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