Invention Application
US20160087070A1 METHOD AND APPARATIS FOR SOURCE-DRAIN JUNCTION FORMATION FINFET WITH QUANTUM BARRIER AND GROUND PLANE DOPING
有权
采用量子阱和接地平面排水的源 - 漏接头形成FINFET的方法与装置
- Patent Title: METHOD AND APPARATIS FOR SOURCE-DRAIN JUNCTION FORMATION FINFET WITH QUANTUM BARRIER AND GROUND PLANE DOPING
- Patent Title (中): 采用量子阱和接地平面排水的源 - 漏接头形成FINFET的方法与装置
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Application No.: US14495562Application Date: 2014-09-24
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Publication No.: US20160087070A1Publication Date: 2016-03-24
- Inventor: Vladimir MACHKAOUTSAN , Jeffrey Junhao XU , Stanley Seungchul SONG , Mustafa BADAROGLU , Choh Fei YEAP
- Applicant: QUALCOMM Incorporated
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/165 ; H01L29/78
Abstract:
A portion of a bulk silicon (Si) is formed into a fin, having a fin base and, on the fin base, an in-process fin. The fin base is doped Si and the in-process fin is silicon germanium (SiGe). The in-process SiGe fin has a source region and a drain region. Boron is in-situ doped into the drain region and into the source region. Optionally, boron is in-situ doped by forming an epi-layer, having boron, on the drain region and on the source region, and drive-in annealing to diffuse boron in the source region and the drain region.
Public/Granted literature
- US09564518B2 Method and apparatus for source-drain junction formation in a FinFET with in-situ doping Public/Granted day:2017-02-07
Information query
IPC分类:
