Invention Application
US20160093364A1 SELECTIVE CURRENT BOOSTING IN A STATIC RANDOM-ACCESS MEMORY
审中-公开
静态随机存取存储器中的选择性电流升压
- Patent Title: SELECTIVE CURRENT BOOSTING IN A STATIC RANDOM-ACCESS MEMORY
- Patent Title (中): 静态随机存取存储器中的选择性电流升压
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Application No.: US14499147Application Date: 2014-09-27
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Publication No.: US20160093364A1Publication Date: 2016-03-31
- Inventor: Seong-Ook JUNG , Younghwi YANG , Stanley Seungchul SONG , Zhongze WANG , Choh Fei YEAP
- Applicant: QUALCOMM Incorporated
- Main IPC: G11C11/419
- IPC: G11C11/419
Abstract:
Systems and methods include a static random-access memory (SRAM) bit cell circuit having an access transistor configured to pass a read current to a storage node, the access transistor including an access transistor back gate. The access transistor back gate is biased to enable selective current boosting of the read current during a read operation.
Information query
IPC分类:
