Invention Application
- Patent Title: IMAGE SENSOR PIXEL CELL WITH NON-DESTRUCTIVE READOUT
- Patent Title (中): 具有非破坏性读出功能的图像传感器像素单元
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Application No.: US14500193Application Date: 2014-09-29
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Publication No.: US20160093664A1Publication Date: 2016-03-31
- Inventor: Johannes Solhusvik , Dominic Massetti
- Applicant: OMNIVISION TECHNOLOGIES, INC.
- Main IPC: H01L27/148
- IPC: H01L27/148

Abstract:
A pixel cell includes a photodiode coupled to photogenerate image charge in response to incident light. A deep trench isolation structure is disposed proximate to the photodiode to provide a capacitive coupling to the photodiode through the deep trench isolation structure. An amplifier transistor is coupled to the deep trench isolation structure to generate amplified image data in response to the image charge read out from the photodiode through the capacitive coupling provided by the deep trench isolation structure. A row select transistor is coupled to an output of the amplifier transistor to selectively output the amplified image data to a column bitline coupled to the row select transistor.
Public/Granted literature
- US09406718B2 Image sensor pixel cell with non-destructive readout Public/Granted day:2016-08-02
Information query
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