Abstract:
An image sensor includes a pixel array disposed in a first semiconductor die. The pixel array is partitioned into a plurality of pixel sub-arrays. Each one of the plurality of pixel sub-arrays is arranged into a plurality of pixel groups. Each one of the plurality of pixel groups is arranged into a p×q array of pixel cells. A plurality of readout circuits is disposed in a second semiconductor die. An interconnect layer is stacked between the first semiconductor die and the second semiconductor die. The interconnect layer includes a plurality of conductors. Each one of the plurality of pixel sub-arrays is coupled to a corresponding one of the plurality of readout circuits through a corresponding one of the plurality of conductors.
Abstract:
Embodiments of an apparatus including a pixel array including a plurality of individual pixels grouped into pixel kernels having two or more individual pixels, wherein each pixel kernel includes a floating diffusion electrically coupled to all individual pixels in the kernel. A color filter array (CFA) is positioned over and optically coupled to the pixel array, the CFA comprising a plurality of tiled minimal repeating units, each including a plurality of scaled filters having a photoresponse selected from among two or more different photoresponses. Individual pixels within each pixel kernel are optically coupled to a scaled filter. Circuitry and logic coupled to the pixel array cause the apparatus to operate in a first mode wherein signals from a subset of individual pixels are individually transferred to their floating diffusion and read, resulting in a high-resolution, low-sensitivity sub-image and a second mode wherein signals from individual pixels in every pixel kernel are binned into the kernel's floating diffusion and read, resulting in a low-resolution, high-sensitivity image.
Abstract:
A method for testing an electronic memory while the memory is in use includes: (a) detecting an access to the electronic memory at a test address, (b) saving, in a register subsystem, write data written to the electronic memory at a location corresponding to the test address, (c) comparing the write data to data read from the electronic memory at the location corresponding to the test address to determine whether the memory has a fault, and (d) generating an error signal if the memory has a fault.
Abstract:
Method of implementing stacked chip HDR algorithm in image sensor starts with pixel array capturing first frame with first exposure time and second frame with a second exposure time that is longer or shorter than the first exposure time. Pixel array is disposed in first semiconductor die and is partitioned into pixel sub-arrays. Each pixel sub-array is arranged into pixel groups, and each pixel group is arranged into pixel cell array. Readout circuits disposed in second semiconductor die acquire image data of first and second frame. Each pixel sub-array is coupled to a corresponding readout circuit through a corresponding one of a plurality of conductors. ADC circuits convert image data from first and second frames to first and second ADC outputs. Function logic on the second semiconductor die adding first and second ADC outputs to generate a final ADC output. Other embodiments are also described.
Abstract:
Apparatuses and methods for image sensors with pixels that reduce or eliminate flicker induced by high intensity illumination are disclosed. An example image sensor may include a photodiode, a transfer gate, an anti-blooming gate, and first and second source follower transistors. The photodiode may capture light and generate charge in response, and the photodiode may have a charge capacity. The transfer gate may selectively transfer charge to a first floating diffusion, and the anti-blooming gate may selectively transfer excess charge to a second floating diffusion when the generated charge is greater than the photodiode charge capacity. The first source-follower transistor may be directly coupled to the first floating diffusion by a gate, the first source-follower to selectively output a first signal to a first bitline in response to enablement of a first row selection transistor, and the second source-follower transistor may be capacitively-coupled to the second floating diffusion, the second source-follower to selectively output a second signal to a second bitline in response to enablement of a second row selection transistor.
Abstract:
Method of implementing stacked chip HDR algorithm in image sensor starts with pixel array capturing first frame with first exposure time and second frame with a second exposure time that is longer or shorter than the first exposure time. Pixel array is disposed in first semiconductor die and is partitioned into pixel sub-arrays. Each pixel sub-array is arranged into pixel groups, and each pixel group is arranged into pixel cell array. Readout circuits disposed in second semiconductor die acquire image data of first and second frame. Each pixel sub-array is coupled to a corresponding readout circuit through a corresponding one of a plurality of conductors. ADC circuits convert image data from first and second frames to first and second ADC outputs. Function logic on the second semiconductor die adding first and second ADC outputs to generate a final ADC output. Other embodiments are also described.
Abstract:
A pixel cell includes a photodiode coupled to photogenerate image charge in response to incident light. A deep trench isolation structure is disposed proximate to the photodiode to provide a capacitive coupling to the photodiode through the deep trench isolation structure. An amplifier transistor is coupled to the deep trench isolation structure to generate amplified image data in response to the image charge read out from the photodiode through the capacitive coupling provided by the deep trench isolation structure. A row select transistor is coupled to an output of the amplifier transistor to selectively output the amplified image data to a column bitline coupled to the row select transistor.
Abstract:
A method for testing an electronic memory while the memory is in use includes: (a) detecting an access to the electronic memory at a test address, (b) saving, in a register subsystem, write data written to the electronic memory at a location corresponding to the test address, (c) comparing the write data to data read from the electronic memory at the location corresponding to the test address to determine whether the memory has a fault, and (d) generating an error signal if the memory has a fault.
Abstract:
Embodiments of an apparatus including a pixel array including a plurality of individual pixels grouped into pixel kernels having two or more individual pixels, wherein each pixel kernel includes a floating diffusion electrically coupled to all individual pixels in the kernel. A color filter array (CFA) is positioned over and optically coupled to the pixel array, the CFA comprising a plurality of tiled minimal repeating units, each including a plurality of scaled filters having a photoresponse selected from among two or more different photoresponses. Individual pixels within each pixel kernel are optically coupled to a scaled filter. Circuitry and logic coupled to the pixel array cause the apparatus to operate in a first mode wherein signals from a subset of individual pixels are individually transferred to their floating diffusion and read, resulting in a high-resolution, low-sensitivity sub-image and a second mode wherein signals from individual pixels in every pixel kernel are binned into the kernel's floating diffusion and read, resulting in a low-resolution, high-sensitivity image.
Abstract:
A pixel includes an array of a plurality of photodiodes. The array of photodiodes includes a plurality of rows of photodiodes and a plurality of columns of photodiodes. The plurality of photodiodes includes a set of first photodiodes that has a first surface area and at least one second photodiode that has a second surface area that is smaller than the first surface area. The first photodiodes are arranged to be symmetric with respect to the at least one second photodiode. Output circuitry is electrically coupled to each of the first photodiodes in the set of first photodiodes. A switch is selectively, operably closed to electrically couple the output circuitry to the second photodiode.