Invention Application
- Patent Title: SEMICONDUCTOR DEVICES WITH REPLACEMENT GATE STRUCTURES
- Patent Title (中): 具有更换门结构的半导体器件
-
Application No.: US14963378Application Date: 2015-12-09
-
Publication No.: US20160093713A1Publication Date: 2016-03-31
- Inventor: Ruilong Xie , Xiuyu Cai , Andy C. Wei , Qi Zhang , Ajey Poovannummoottil Jacob , Michael Hargrove
- Applicant: GLOBALFOUNDRIES Inc.
- Main IPC: H01L29/51
- IPC: H01L29/51 ; H01L29/78
Abstract:
A transistor device includes a semiconductor substrate and a gate structure positioned above a surface of the semiconductor substrate. The gate structure includes a high-k gate insulation layer positioned above the surface of the semiconductor substrate and at least one work-function adjusting layer of material positioned above the high-k gate insulation layer, wherein an upper surface of the at least one work-function adjusting layer of material has a stepped profile when viewed in cross-section taken in a gate-width direction of the transistor device. The gate structure further includes a layer of conductive material positioned on the stepped upper surface of the at least one work-function adjusting layer of material.
Information query
IPC分类:
