Invention Application
US20160099147A1 GAS FLOW PROFILE MODULATED CONTROL OF OVERLAY IN PLASMA CVD FILMS
有权
气体流动剖面调整等离子体CVD膜中的叠加控制
- Patent Title: GAS FLOW PROFILE MODULATED CONTROL OF OVERLAY IN PLASMA CVD FILMS
- Patent Title (中): 气体流动剖面调整等离子体CVD膜中的叠加控制
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Application No.: US14549380Application Date: 2014-11-20
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Publication No.: US20160099147A1Publication Date: 2016-04-07
- Inventor: Prashant Kumar KULSHRESHTHA , Sudha RATHI , Praket P. JHA , Saptarshi BASU , Kwangduk Douglas LEE , Martin J. SEAMONS , Bok Hoen KIM , Ganesh BALASUBRAMANIAN , Ziqing DUAN , Lei JING , Mandar B. PANDIT
- Applicant: Applied Materials, Inc.
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C23C16/455 ; C23C16/458 ; C23C16/46 ; H01L21/66 ; H01L21/033

Abstract:
Methods for modulating local stress and overlay error of one or more patterning films may include modulating a gas flow profile of gases introduced into a chamber body, flowing gases within the chamber body toward a substrate, rotating the substrate, and unifying a center-to-edge temperature profile of the substrate by controlling the substrate temperature with a dual zone heater. A chamber for depositing a film may include a chamber body comprising one or more processing regions. The chamber body may include a gas distribution assembly having a blocker plate for delivering gases into the one or more processing regions. The blocker plate may have a first region and a second region, and the first region and second region each may have a plurality of holes. The chamber body may have a dual zone heater.
Public/Granted literature
- US09390910B2 Gas flow profile modulated control of overlay in plasma CVD films Public/Granted day:2016-07-12
Information query
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