Invention Application
US20160099147A1 GAS FLOW PROFILE MODULATED CONTROL OF OVERLAY IN PLASMA CVD FILMS 有权
气体流动剖面调整等离子体CVD膜中的叠加控制

GAS FLOW PROFILE MODULATED CONTROL OF OVERLAY IN PLASMA CVD FILMS
Abstract:
Methods for modulating local stress and overlay error of one or more patterning films may include modulating a gas flow profile of gases introduced into a chamber body, flowing gases within the chamber body toward a substrate, rotating the substrate, and unifying a center-to-edge temperature profile of the substrate by controlling the substrate temperature with a dual zone heater. A chamber for depositing a film may include a chamber body comprising one or more processing regions. The chamber body may include a gas distribution assembly having a blocker plate for delivering gases into the one or more processing regions. The blocker plate may have a first region and a second region, and the first region and second region each may have a plurality of holes. The chamber body may have a dual zone heater.
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