公开(公告)号：US20160307752A1

公开(公告)日：2016-10-20

申请号：US15192732

申请日：2016-06-24

Applicant: Applied Materials, Inc.

Inventor： Prashant Kumar KULSHRESHTHA ,  Sudha RATHI ,  Praket P. JHA ,  Saptarshi BASU ,  Kwangduk Douglas LEE ,  Martin J. SEAMONS ,  Bok Hoen KIM ,  Ganesh BALASUBRAMANIAN ,  Ziqing DUAN ,  Lei JING ,  Mandar B. PANDIT

IPC: H01L21/02 ,  H01L21/033 ,  C23C16/04 ,  C23C16/458 ,  C23C16/46 ,  H01L21/66 ,  C23C16/455

CPC classification number: H01L21/02274 ,  C23C16/04 ,  C23C16/26 ,  C23C16/455 ,  C23C16/45502 ,  C23C16/45508 ,  C23C16/45565 ,  C23C16/458 ,  C23C16/4584 ,  C23C16/4586 ,  C23C16/46 ,  H01L21/02115 ,  H01L21/0337 ,  H01L21/31144 ,  H01L22/12

Abstract: Methods for modulating local stress and overlay error of one or more patterning films may include modulating a gas flow profile of gases introduced into a chamber body, flowing gases within the chamber body toward a substrate, rotating the substrate, and unifying a center-to-edge temperature profile of the substrate by controlling the substrate temperature with a dual zone heater. A chamber for depositing a film may include a chamber body comprising one or more processing regions. The chamber body may include a gas distribution assembly having a blocker plate for delivering gases into the one or more processing regions. The blocker plate may have a first region and a second region, and the first region and second region each may have a plurality of holes. The chamber body may have a dual zone heater.

公开(公告)号：US20170103893A1

公开(公告)日：2017-04-13

申请号：US15233351

申请日：2016-08-10

Applicant: Applied Materials, Inc.

Inventor： Prashant Kumar KULSHRESHTHA ,  Ziqing DUAN ,  Karthik Thimmavajjula NARASIMHA ,  Kwangduk Douglas LEE ,  Bok Hoen KIM

IPC: H01L21/033

CPC classification number: H01L21/0338 ,  C23C16/32 ,  C23C16/505 ,  H01L21/02112 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/3065

Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of boron-carbon films on a substrate. In one implementation, a method of processing a substrate is provided. The method comprises flowing a hydrocarbon-containing gas mixture into a processing volume of a processing chamber having a substrate positioned therein, wherein the substrate is heated to a substrate temperature from about 400 degrees Celsius to about 700 degrees Celsius, flowing a boron-containing gas mixture into the processing volume and generating an RF plasma in the processing volume to deposit a boron-carbon film on the heated substrate, wherein the boron-carbon film has an elastic modulus of from about 200 to about 400 GPa and a stress from about −100 MPa to about 100 MPa.

公开(公告)号：US20160358804A1

公开(公告)日：2016-12-08

申请号：US15166328

申请日：2016-05-27

Applicant: Applied Materials, Inc.

Inventor： Prashant Kumar KULSHRESHTHA ,  Ziqing DUAN ,  Abdul Aziz KHAJA ,  Zheng John YE ,  Amit Kumar BANSAL

IPC: H01L21/683 ,  H01J37/32 ,  C23C16/458 ,  C23C16/30 ,  C23C16/505

CPC classification number: H01J37/32477 ,  C23C16/0272 ,  C23C16/029 ,  C23C16/347 ,  C23C16/36 ,  C23C16/4404 ,  C23C16/4586 ,  C23C16/5096 ,  H01J37/32082 ,  H01L21/6831

Abstract: The present disclosure generally relates to processing chamber seasoning layers having a graded composition. In one example, the seasoning layer is a boron-carbon-nitride (BCN) film. The BCN film may have a greater composition of boron at the base of the film. As the BCN film is deposited, the boron concentration may approach zero, while the relative carbon and nitrogen concentration increases. The BCN film may be deposited by initially co-flowing a boron precursor, a carbon precursor, and a nitrogen precursor. After a first period of time, the flow rate of the boron precursor may be reduced. As the flow rate of boron precursor is reduced, RF power may be applied to generate a plasma during deposition of the seasoning layer.

Abstract translation: 本公开总体上涉及具有渐变组成的处理室调味层。 在一个实例中，调味层是硼碳氮化物（BCN）膜。 BCN膜可以在膜的底部具有更大的硼组成。 当BCN膜沉积时，硼浓度可能接近零，而相对碳氮浓度增加。 可以通过最初共同流动硼前体，碳前体和氮前体来沉积BCN膜。 在第一时间段之后，可以减少硼前体的流速。 当硼前体的流速减小时，可以施加RF功率以在调节层的沉积期间产生等离子体。

公开(公告)号：US20150247237A1

公开(公告)日：2015-09-03

申请号：US14594296

申请日：2015-01-12

Applicant: Applied Materials, Inc.

Inventor： Sungwon HA ,  Kwangduk Douglas LEE ,  Ganesh BALASUBRAMANIAN ,  Juan Carlos ROCHA-ALVAREZ ,  Martin Jay SEAMONS ,  Ziqing DUAN ,  Zheng John YE ,  Bok Hoen KIM ,  Lei JING ,  Ngoc LE ,  Ndanka MUKUTI

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/50

CPC classification number: C23C16/45565 ,  C23C16/4401 ,  C23C16/4585 ,  C23C16/5096 ,  H01J37/32091 ,  H01J37/32449

Abstract: Embodiments described herein relate to a faceplate for improving film uniformity. A semiconductor processing apparatus includes a pedestal, an edge ring and a faceplate having distinct regions with differing hole densities. The faceplate has an inner region and an outer region which surrounds the inner region. The inner region has a greater density of holes formed therethrough when compared to the outer region. The inner region is sized to correspond with a substrate being processed while the outer region is sized to correspond with the edge ring.

Abstract translation: 本文所述的实施例涉及一种用于提高膜均匀性的面板。 半导体处理装置包括具有不同孔洞密度区域的基座，边缘环和面板。 面板具有内部区域和围绕内部区域的外部区域。 当与外部区域相比时，内部区域具有通过其形成的更大密度的孔。 内部区域的尺寸被设计成与被处理的基底相对应，而外部区域的尺寸被设计成与边缘环相对应。

公开(公告)号：US20190122889A1

公开(公告)日：2019-04-25

申请号：US16219557

申请日：2018-12-13

Applicant: Applied Materials, Inc.

Inventor： Prashant Kumar KULSHRESHTHA ,  Ziqing DUAN ,  Karthik Thimmavajjula NARASIMHA ,  Kwangduk Douglas LEE ,  Bok Hoen KIM

IPC: H01L21/033 ,  C23C16/32 ,  H01L21/02 ,  H01L21/3065 ,  C23C16/505

Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of boron-carbon films on a substrate. In one implementation, a method of processing a substrate is provided. The method comprises flowing a hydrocarbon-containing gas mixture into a processing volume of a processing chamber having a substrate positioned therein, wherein the substrate is heated to a substrate temperature from about 400 degrees Celsius to about 700 degrees Celsius, flowing a boron-containing gas mixture into the processing volume and generating an RF plasma in the processing volume to deposit a boron-carbon film on the heated substrate, wherein the boron-carbon film has an elastic modulus of from about 200 to about 400 GPa and a stress from about −100 MPa to about 100 MPa.

公开(公告)号：US20170178758A1

公开(公告)日：2017-06-22

申请号：US15369219

申请日：2016-12-05

Applicant: Applied Materials, Inc.

Inventor： Sungwon HA ,  Paul CONNORS ,  Jianhua ZHOU ,  Juan Carlos ROCHA-ALVAREZ ,  Kwangduk Douglas LEE ,  Ziqing DUAN ,  Nicolas J. BRIGHT ,  Feng BI

IPC: G21F3/00 ,  C23C16/458 ,  C23C16/50 ,  C23C16/448

CPC classification number: C23C16/448 ,  C23C16/50 ,  H01J37/32724 ,  H01L21/67115 ,  H01L21/6719

Abstract: The present disclosure generally relates to a radiation shield for a process chamber which improves substrate temperature uniformity. The radiation shield may be disposed between a slit valve door of the process chamber and a substrate support disposed within the process chamber. In some embodiments, the radiation shield may be disposed under a heater of the process chamber. Furthermore, the radiation shield may block radiation and/or heat supplied from the process chamber, and in some embodiments, the radiation shield may absorb and/or reflect radiation, thus providing improved temperature uniformity as well as improving a planar profile of the substrate.

公开(公告)号：US20210225650A1

公开(公告)日：2021-07-22

申请号：US17220441

申请日：2021-04-01

Applicant: Applied Materials, Inc.

Inventor： Prashant Kumar KULSHRESHTHA ,  Ziqing DUAN ,  Karthik Thimmavajjula NARASIMHA ,  Kwangduk Douglas LEE ,  Bok Hoen KIM

IPC: H01L21/033 ,  H01L21/3065 ,  C23C16/505 ,  H01L21/02 ,  C23C16/32

Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of boron-carbon films on a substrate. In one implementation, a method of processing a substrate is provided. The method comprises flowing a hydrocarbon-containing gas mixture into a processing volume of a processing chamber having a substrate positioned therein, wherein the substrate is heated to a substrate temperature from about 400 degrees Celsius to about 700 degrees Celsius, flowing a boron-containing gas mixture into the processing volume and generating an RF plasma in the processing volume to deposit a boron-carbon film on the heated substrate, wherein the boron-carbon film has an elastic modulus of from about 200 to about 400 GPa and a stress from about −100 MPa to about 100 MPa.

公开(公告)号：US20190326110A1

公开(公告)日：2019-10-24

申请号：US16462513

申请日：2017-11-16

Applicant: Applied Materials, Inc.

Inventor： Milind GADRE ,  Shaunak MUKHERJEE ,  Praket P. JHA ,  Deenesh PADHI ,  Ziqing DUAN ,  Abhijit B. MALLICK

IPC: H01L21/02 ,  C23C16/34 ,  H01L21/768

Abstract: Embodiments disclosed herein relate to methods for forming memory devices, and more specifically to improved methods for forming a dielectric encapsulation layer over a memory material in a memory device. In one embodiment, the method includes thermally depositing a first material over a memory material at a temperature less than the temperature of the thermal budget of the memory material, exposing the first material to nitrogen plasma to incorporate nitrogen in the first material, and repeating the thermal deposition and nitrogen plasma operations to form a hermetic, conformal dielectric encapsulation layer over the memory material. Thus, a memory device having a hermetic, conformal dielectric encapsulation layer over the memory material is formed.

公开(公告)号：US20170062218A1

公开(公告)日：2017-03-02

申请号：US15203032

申请日：2016-07-06

Applicant: Applied Materials, Inc.

Inventor： Ziqing DUAN ,  Kwangduk Douglas LEE ,  Abdul Aziz KHAJA ,  Amit Kumar BANSAL ,  Bok Hoen KIM ,  Prashant Kumar KULSHRESHTHA

IPC: H01L21/033 ,  C23C16/455 ,  C23C16/505

CPC classification number: H01L21/0338 ,  C23C16/26 ,  C23C16/4404 ,  C23C16/455 ,  C23C16/45557 ,  C23C16/505 ,  C23C16/5096 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/31111 ,  H01L21/31122

Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of boron-containing amorphous carbon films on a substrate with reduced particle contamination. In one implementation, the method comprises flowing a hydrocarbon-containing gas mixture into a processing volume having a substrate positioned therein, flowing a boron-containing gas mixture into the processing volume, stabilizing the pressure in the processing volume for a predefined RF-on delay time period, generating an RF plasma in the processing volume after the predefined RF-on delay time period expires to deposit a boron-containing amorphous film on the substrate, exposing the processing volume of the process chamber to a dry cleaning process and depositing an amorphous boron season layer over at least one surface in the processing volume of the process chamber.

Abstract translation: 本公开的实施方式一般涉及集成电路的制造。 更具体地，本文所述的实施方案提供了用于在具有减少的颗粒污染的基底上沉积含硼无定形碳膜的技术。 在一个实施方案中，该方法包括使含烃气体混合物流入具有位于其中的基底的处理体积，使含硼气体混合物流入处理体积中，将处理体积中的压力稳定在预定义的射频开启延迟 时间段，在预定义的射频导通延迟时间段到期之后在处理容积中产生RF等离子体以在基底上沉积含硼非晶膜，将处理室的处理体积暴露于干法清洗过程中并沉积非晶态 硼化季节层在处理室的处理体积中的至少一个表面上。

公开(公告)号：US20160099147A1

公开(公告)日：2016-04-07

申请号：US14549380

申请日：2014-11-20

Applicant: Applied Materials, Inc.

Inventor： Prashant Kumar KULSHRESHTHA ,  Sudha RATHI ,  Praket P. JHA ,  Saptarshi BASU ,  Kwangduk Douglas LEE ,  Martin J. SEAMONS ,  Bok Hoen KIM ,  Ganesh BALASUBRAMANIAN ,  Ziqing DUAN ,  Lei JING ,  Mandar B. PANDIT

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  H01L21/66 ,  H01L21/033

CPC classification number: H01L21/02274 ,  C23C16/04 ,  C23C16/26 ,  C23C16/455 ,  C23C16/45502 ,  C23C16/45508 ,  C23C16/45565 ,  C23C16/458 ,  C23C16/4584 ,  C23C16/4586 ,  C23C16/46 ,  H01L21/02115 ,  H01L21/0337 ,  H01L21/31144 ,  H01L22/12

Abstract: Methods for modulating local stress and overlay error of one or more patterning films may include modulating a gas flow profile of gases introduced into a chamber body, flowing gases within the chamber body toward a substrate, rotating the substrate, and unifying a center-to-edge temperature profile of the substrate by controlling the substrate temperature with a dual zone heater. A chamber for depositing a film may include a chamber body comprising one or more processing regions. The chamber body may include a gas distribution assembly having a blocker plate for delivering gases into the one or more processing regions. The blocker plate may have a first region and a second region, and the first region and second region each may have a plurality of holes. The chamber body may have a dual zone heater.

Abstract translation: 用于调制一个或多个图案化膜的局部应力和覆盖误差的方法可以包括调节引入室主体的气体的气流分布，将腔体内的气体朝向衬底流动，旋转衬底， 通过使用双区加热器控制基板温度，来实现基板的边缘温度分布。 用于沉积膜的室可以包括包括一个或多个处理区域的室主体。 腔室主体可以包括气体分配组件，其具有用于将气体输送到一个或多个处理区域中的阻挡板。 阻挡板可以具有第一区域和第二区域，并且第一区域和第二区域各自可以具有多个孔。 腔体可以具有双区加热器。