Invention Application
- Patent Title: SYSTEM AND METHOD OF MANUFACTURING A THIN FILM TRANSISTOR SUBSTRATE
- Patent Title (中): 制造薄膜晶体管基板的系统和方法
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Application No.: US14664232Application Date: 2015-03-20
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Publication No.: US20160099264A1Publication Date: 2016-04-07
- Inventor: Su-Kyoung YANG , Sang-Won SHIN , Hyun-Eok SHIN , Chan-Woo YANG , Dong-Min LEE
- Applicant: Samsung Display Co., LTD.
- Priority: KR10-2014-0134582 20141006
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L21/28 ; H01L29/49 ; H01L29/423 ; H01L29/45 ; C23C14/58 ; H01L21/67 ; H01J37/34 ; C23C14/02 ; C23C14/16 ; C23C14/08 ; H01L29/66 ; H01L21/285

Abstract:
In a method of manufacturing a thin film transistor substrate, a first metal layer is formed on a first surface of a base substrate. The base substrate is cooled by contacting the first metal layer with a first cooling plate and by contacting a second surface of the base substrate with a second cooling plate. The first and second surfaces of the base substrate face opposite directions. A gate electrode is formed by patterning the first metal layer. A source electrode and a drain electrode are formed. The source electrode is spaced apart from the drain electrode. The source and drain electrodes partially overlap the gate electrode. A pixel electrode electrically connected to the drain electrode is formed.
Public/Granted literature
- US09748283B2 System and method of manufacturing a thin film transistor substrate Public/Granted day:2017-08-29
Information query
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