发明申请
US20160109506A1 SEMICONDUCTOR DEVICE WITH UPSET EVENT DETECTION AND METHOD OF MAKING
有权
具有UPS事件检测的半导体器件及其制造方法
- 专利标题： SEMICONDUCTOR DEVICE WITH UPSET EVENT DETECTION AND METHOD OF MAKING
- 专利标题（中）： 具有UPS事件检测的半导体器件及其制造方法
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申请号： US14514449申请日： 2014-10-15
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公开(公告)号： US20160109506A1公开(公告)日： 2016-04-21
- 发明人: MARK D. HALL , STEVEN G.H. ANDERSON , MEHUL D. SHROFF
- 申请人： MARK D. HALL , STEVEN G.H. ANDERSON , MEHUL D. SHROFF
- 主分类号： G01R31/26
- IPC分类号： G01R31/26 ; H01L21/822 ; H01L29/06 ; H01L27/08 ; H01L29/66
摘要：
A semiconductor device includes a substrate, first electronic circuitry formed on the substrate, a first diode buried in the substrate under the first electronic circuitry, and a first fault detection circuit coupled to the first diode to detect energetic particle strikes on the first electronic circuitry.
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