Invention Application
US20160111290A1 CMOS Vt CONTROL INTEGRATION BY MODIFICATION OF METAL-CONTAINING GATE ELECTRODES
有权
通过修改含金属电极的CMOS Vt控制集成
- Patent Title: CMOS Vt CONTROL INTEGRATION BY MODIFICATION OF METAL-CONTAINING GATE ELECTRODES
- Patent Title (中): 通过修改含金属电极的CMOS Vt控制集成
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Application No.: US14918503Application Date: 2015-10-20
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Publication No.: US20160111290A1Publication Date: 2016-04-21
- Inventor: Genji Nakamura , Toshio Hasegawa
- Applicant: Tokyo Electron Limited
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L21/285 ; H01L21/3213 ; H01L21/8238 ; H01L29/51 ; H01L29/49
Abstract:
A method of forming a semiconductor device is disclosed in various embodiments. The method includes providing a substrate containing first and second device regions, and a high-k film on the substrate, depositing a metal nitride gate electrode film on the high-k film, forming a metal-containing gate electrode film on the metal nitride gate electrode film in the second device region but not in the first device region, and depositing a Si-based cap layer on the metal-containing gate electrode film in the second device region and on the metal nitride gate electrode film in the first device region.
Public/Granted literature
- US09698020B2 CMOS Vt control integration by modification of metal-containing gate electrodes Public/Granted day:2017-07-04
Information query
IPC分类:
