Invention Application
- Patent Title: EXTREME HIGH MOBILITY CMOS LOGIC
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Application No.: US14977479Application Date: 2015-12-21
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Publication No.: US20160111423A1Publication Date: 2016-04-21
- Inventor: Suman Datta , Mantu K. Hudait , Mark L. Doczy , Jack T. Kavalieros , Majumdar AmIan , Justin K. Brask , Been-Yih Jin , Matthew V. Metz , Robert S. Chau
- Applicant: Intel Corporation
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L29/12 ; H01L29/417 ; H01L29/66 ; H01L29/423 ; H01L21/8238 ; H01L21/02 ; H01L29/205 ; H01L29/51
Abstract:
A CMOS device includes a PMOS transistor with a first quantum well structure and an NMOS device with a second quantum well structure. The PMOS and NMOS transistors are formed on a substrate.
Public/Granted literature
- US09691856B2 Extreme high mobility CMOS logic Public/Granted day:2017-06-27
Information query
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