发明申请
- 专利标题: ETCHING PROCESSES FOR SOLAR CELL FABRICATION
- 专利标题(中): 太阳能电池制造的蚀刻工艺
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申请号: US14975175申请日: 2015-12-18
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公开(公告)号: US20160111583A1公开(公告)日: 2016-04-21
- 发明人: Scott Harrington , Venkatasubramani Balu , Westerberg Staffan , Peter John Cousins
- 申请人: Scott Harrington , Venkatasubramani Balu , Westerberg Staffan , Peter John Cousins
- 主分类号: H01L31/18
- IPC分类号: H01L31/18
摘要:
A method of fabricating a solar cell can include forming a first dopant region over a silicon substrate and an oxide region over the first dopant region. In an embodiment, the oxide region can protect the first dopant region from a first etching process. In an embodiment, a second dopant region can be formed over the silicon substrate, where a mask can be formed to protect a first portion of the second dopant region from the first etching process. In an embodiment, the first etching process can be performed to expose portions of the silicon substrate and/or a silicon region. A second etching process can be performed to form a trench region to separate a first and second doped region of the solar cell. A third etching process can be performed to remove contaminants from the solar cell and remove any remaining portions of the oxide region.
公开/授权文献
- US09419166B2 Etching processes for solar cell fabrication 公开/授权日:2016-08-16
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