公开(公告)号：US20160111583A1

公开(公告)日：2016-04-21

申请号：US14975175

申请日：2015-12-18

申请人： Scott Harrington ,  Venkatasubramani Balu ,  Westerberg Staffan ,  Peter John Cousins

发明人： Scott Harrington ,  Venkatasubramani Balu ,  Westerberg Staffan ,  Peter John Cousins

IPC分类号： H01L31/18

CPC分类号： H01L31/1804 ,  H01L31/022441 ,  H01L31/035281 ,  H01L31/0747 ,  H01L31/075 ,  H01L31/202 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： A method of fabricating a solar cell can include forming a first dopant region over a silicon substrate and an oxide region over the first dopant region. In an embodiment, the oxide region can protect the first dopant region from a first etching process. In an embodiment, a second dopant region can be formed over the silicon substrate, where a mask can be formed to protect a first portion of the second dopant region from the first etching process. In an embodiment, the first etching process can be performed to expose portions of the silicon substrate and/or a silicon region. A second etching process can be performed to form a trench region to separate a first and second doped region of the solar cell. A third etching process can be performed to remove contaminants from the solar cell and remove any remaining portions of the oxide region.

摘要翻译： 制造太阳能电池的方法可以包括在硅衬底上形成第一掺杂剂区域和在第一掺杂剂区域上形成氧化物区域。 在一个实施例中，氧化物区域可以保护第一掺杂剂区域免受第一蚀刻工艺的影响。 在一个实施例中，可以在硅衬底上形成第二掺杂剂区域，其中可以形成掩模以保护第一掺杂剂区域的第一部分不受第一蚀刻工艺的影响。 在一个实施例中，可以执行第一蚀刻工艺以暴露硅衬底和/或硅区域的部分。 可以执行第二蚀刻工艺以形成分离太阳能电池的第一和第二掺杂区域的沟槽区域。 可以进行第三蚀刻工艺以从太阳能电池去除污染物并去除氧化物区域的任何剩余部分。

公开(公告)号：US09419166B2

公开(公告)日：2016-08-16

申请号：US14975175

申请日：2015-12-18

申请人： Scott Harrington ,  Venkatasubramani Balu ,  Westerberg Staffan ,  Peter John Cousins

发明人： Scott Harrington ,  Venkatasubramani Balu ,  Westerberg Staffan ,  Peter John Cousins

IPC分类号： H01L21/00 ,  H01L31/18

CPC分类号： H01L31/1804 ,  H01L31/022441 ,  H01L31/035281 ,  H01L31/0747 ,  H01L31/075 ,  H01L31/202 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： A method of fabricating a solar cell can include forming a first dopant region over a silicon substrate and an oxide region over the first dopant region. In an embodiment, the oxide region can protect the first dopant region from a first etching process. In an embodiment, a second dopant region can be formed over the silicon substrate, where a mask can be formed to protect a first portion of the second dopant region from the first etching process. In an embodiment, the first etching process can be performed to expose portions of the silicon substrate and/or a silicon region. A second etching process can be performed to form a trench region to separate a first and second doped region of the solar cell. A third etching process can be performed to remove contaminants from the solar cell and remove any remaining portions of the oxide region.

摘要翻译： 制造太阳能电池的方法可以包括在硅衬底上形成第一掺杂剂区域和在第一掺杂剂区域上形成氧化物区域。 在一个实施例中，氧化物区域可以保护第一掺杂剂区域免受第一蚀刻工艺的影响。 在一个实施例中，可以在硅衬底上形成第二掺杂剂区域，其中可以形成掩模以保护第一掺杂剂区域的第一部分不受第一蚀刻工艺的影响。 在一个实施例中，可以执行第一蚀刻工艺以暴露硅衬底和/或硅区域的部分。 可以执行第二蚀刻工艺以形成分离太阳能电池的第一和第二掺杂区域的沟槽区域。 可以进行第三蚀刻工艺以从太阳能电池去除污染物并去除氧化物区域的任何剩余部分。

公开(公告)号：US09246046B1

公开(公告)日：2016-01-26

申请号：US14498850

申请日：2014-09-26

申请人： Scott Harrington ,  Venkatasubramani Balu ,  Staffan Westerberg ,  Peter John Cousins

发明人： Scott Harrington ,  Venkatasubramani Balu ,  Staffan Westerberg ,  Peter John Cousins

IPC分类号： H01L21/00 ,  H01L31/20 ,  H01L31/18 ,  H01L31/068 ,  H01L31/0288 ,  H01L31/0352

CPC分类号： H01L31/1804 ,  H01L31/022441 ,  H01L31/035281 ,  H01L31/0747 ,  H01L31/075 ,  H01L31/202 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： A method of fabricating a solar cell can include forming a first dopant region over a silicon substrate and an oxide region over the first dopant region. In an embodiment, the oxide region can protect the first dopant region from a first etching process. In an embodiment, a second dopant region can be formed over the silicon substrate, where a mask can be formed to protect a first portion of the second dopant region from the first etching process. In an embodiment, the first etching process can be performed to expose portions of the silicon substrate and/or a silicon region. A second etching process can be performed to form a trench region to separate a first and second doped region of the solar cell. A third etching process can be performed to remove contaminants from the solar cell and remove any remaining portions of the oxide region.

公开(公告)号：US20170288074A1

公开(公告)日：2017-10-05

申请号：US15334706

申请日：2016-10-26

申请人： David D. Smith ,  Timothy Weidman ,  Scott Harrington ,  Venkatasubramani Balu

发明人： David D. Smith ,  Timothy Weidman ,  Scott Harrington ,  Venkatasubramani Balu

IPC分类号： H01L31/0224 ,  H01L31/0352 ,  H01L31/0216 ,  H01L31/0236

CPC分类号： H01L31/022441 ,  H01L31/02167 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/035281 ,  H01L31/0745 ,  Y02E10/50

摘要： Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a back contact solar cell can include a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed on the back surface of the substrate. A third thin dielectric layer is disposed over an exposed outer portion of the first polycrystalline silicon emitter region and is disposed laterally directly between the first and second polycrystalline silicon emitter regions. A first conductive contact structure is disposed on the first polycrystalline silicon emitter region. A second conductive contact structure is disposed on the second polycrystalline silicon emitter region. Metallization methods, include etching techniques for forming a first and second conductive contact structure are also described.

公开(公告)号：US09502601B1

公开(公告)日：2016-11-22

申请号：US15089382

申请日：2016-04-01

申请人： David D. Smith ,  Timothy Weidman ,  Scott Harrington ,  Venkatasubramani Balu

发明人： David D. Smith ,  Timothy Weidman ,  Scott Harrington ,  Venkatasubramani Balu

IPC分类号： H01L31/0224 ,  H01L31/18 ,  H01L31/028 ,  H01L31/0216 ,  H01L31/0236

CPC分类号： H01L31/022441 ,  H01L31/02167 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/035281 ,  H01L31/0745 ,  Y02E10/50

摘要： Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a back contact solar cell can include a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed on the back surface of the substrate. A third thin dielectric layer is disposed over an exposed outer portion of the first polycrystalline silicon emitter region and is disposed laterally directly between the first and second polycrystalline silicon emitter regions. A first conductive contact structure is disposed on the first polycrystalline silicon emitter region. A second conductive contact structure is disposed on the second polycrystalline silicon emitter region. Metallization methods, include etching techniques for forming a first and second conductive contact structure are also described.

摘要翻译： 描述了具有差异化的P型和N型区域结构的太阳能电池发射极区域的制造方法和所得的太阳能电池。 在一个示例中，背接触太阳能电池可以包括具有光接收表面和背面的基板。 第一导电类型的第一多晶硅发射极区域设置在设置在基板的背面上的第一薄介电层上。 具有第二不同导电类型的第二多晶硅发射极区域设置在设置在基板的背面上的第二薄介电层上。 第三薄介电层设置在第一多晶硅发射极区域的暴露的外部部分上，并且横向地设置在第一和第二多晶硅发射极区域之间。 第一导电接触结构设置在第一多晶硅发射极区域上。 第二导电接触结构设置在第二多晶硅发射极区域上。 还描述了金属化方法，包括用于形成第一和第二导电接触结构的蚀刻技术。

公开(公告)号：US09173748B2

公开(公告)日：2015-11-03

申请号：US12839491

申请日：2010-07-20

申请人： Stephen D. Cook ,  Scott Harrington

发明人： Stephen D. Cook ,  Scott Harrington

IPC分类号： A61F2/44 ,  A61F2/30

CPC分类号： A61F2/4425 ,  A61F2002/30016 ,  A61F2002/30563 ,  A61F2002/3065 ,  A61F2002/30654 ,  A61F2002/30772 ,  A61F2002/30841 ,  A61F2002/30904 ,  A61F2250/0019 ,  A61F2310/00017 ,  A61F2310/00023 ,  A61F2310/00029 ,  A61F2310/00173 ,  A61F2310/0097 ,  A61F2310/00976

摘要： An intervertebral implant for insertion between adjacent vertebral bodies is provided. The intervertebral implant can include a first component. The first component can have a first articulating surface, which can be generally convex. The intervertebral implant can include a second component, which can be generally in the shape of a toroid. The second component can have a second articulating surface. The second articulating surface can be generally concave and articulable with the first articulating surface for retaining motion between the first and second vertebra. The second articulating surface can have a larger radius of curvature than the first articulating surface such that a portion of the first articulating surface extends into an aperture defined by the generally toroid shape.

摘要翻译： 提供了用于在相邻椎体之间插入的椎间植入物。 椎间植入物可以包括第一组分。 第一部件可以具有第一关节表面，其可以是大致凸的。 椎间植入物可以包括第二部件，其通常可以是环形的形状。 第二部件可以具有第二铰接表面。 第二关节表面可以大体上是凹形的并与第一关节表面铰接以保持第一和第二椎骨之间的运动。 第二铰接表面可以具有比第一铰接表面更大的曲率半径，使得第一铰接表面的一部分延伸到由大致环形形状限定的孔中。

公开(公告)号：US20130247967A1

公开(公告)日：2013-09-26

申请号：US13429134

申请日：2012-03-23

申请人： Scott Harrington

发明人： Scott Harrington

IPC分类号： H01L31/0236 ,  H01L21/306 ,  H01L31/18

CPC分类号： H01L31/02363 ,  H01L31/0682 ,  H01L31/1804 ,  H01L31/1876 ,  Y02E10/547 ,  Y02P70/521

摘要： Methods of fabricating solar cells and apparatuses for fabricating solar cells are described. In an example, a method of fabricating a solar cell includes treating a light-receiving surface of a substrate with a gaseous ozone (O3) process. Subsequently, the light-receiving surface of the substrate is texturized.

摘要翻译： 描述制造太阳能电池的方法和用于制造太阳能电池的装置。 在一个示例中，制造太阳能电池的方法包括用气态臭氧（O 3）处理处理衬底的光接收表面。 随后，将基板的光接收表面进行纹理化。

公开(公告)号：US20070168276A1

公开(公告)日：2007-07-19

申请号：US11711698

申请日：2007-02-26

申请人： Arman Glodjo ,  Nathan Bronson ,  Scott Harrington

发明人： Arman Glodjo ,  Nathan Bronson ,  Scott Harrington

IPC分类号： G06Q40/00

CPC分类号： G06Q40/04 ,  G06Q20/027 ,  G06Q20/10 ,  G06Q20/381 ,  G06Q40/00 ,  G06Q40/025 ,  G06Q40/06

摘要： Methods, systems, and computer readable media for facilitating trading two items (L,Q) from the group of items comprising commodities and financial instruments. At least two agents (2) want to trade the items (L,Q). There is a trading channel (3) between the two agents (2) allowing for the execution of trades. There are flow (trading) limits on the items being traded. A central computer (1) is coupled to the two agents (2). Said computer (1) is adapted to convey to each agent (2) current tradable bid and offered prices and sizes subject to the agent's (2) trading limits.

公开(公告)号：US20160064207A1

公开(公告)日：2016-03-03

申请号：US14473857

申请日：2014-08-29

申请人： Scott Harrington ,  Balu Venkatasubramani ,  Amada Lorena Montesdeoca Santana

发明人： Scott Harrington ,  Balu Venkatasubramani ,  Amada Lorena Montesdeoca Santana

IPC分类号： H01L21/02 ,  H01L31/18

CPC分类号： H01L21/02019 ,  H01L21/02052 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of processing a silicon substrate can include etching the silicon substrate with a first etchant having a first concentration and etching with a second etchant having a second concentration. In an embodiment, the second concentration of the second etchant can be greater than the first concentration of the first etchant. In one embodiment, the first etchant can be a different type of etchant than the second etchant. In an embodiment, the first and second etchant can be the same type of etchant. In some embodiments the silicon substrate can be cleaned with a first cleaning solution to remove contaminants from the silicon substrate prior to etching with the first etchant. In an embodiment, the silicon substrate can be cleaned with a second cleaning solution after etching the silicon substrate with a second etchant.

摘要翻译： 处理硅衬底的方法可以包括用具有第一浓度的第一蚀刻剂蚀刻硅衬底，并用具有第二浓度的第二蚀刻剂进行蚀刻。 在一个实施方案中，第二蚀刻剂的第二浓度可以大于第一蚀刻剂的第一浓度。 在一个实施例中，第一蚀刻剂可以是与第二蚀刻剂不同的蚀刻剂类型。 在一个实施方案中，第一和第二蚀刻剂可以是相同类型的蚀刻剂。 在一些实施例中，可以用第一清洁溶液清洁硅衬底，以在用第一蚀刻剂进行蚀刻之前从硅衬底去除污染物。 在一个实施例中，在用第二蚀刻剂蚀刻硅衬底之后，可以用第二清洁溶液清洁硅衬底。

公开(公告)号：US20140134788A1

公开(公告)日：2014-05-15

申请号：US14157386

申请日：2014-01-16

申请人： Tim Dennis ,  Scott Harrington ,  Jane Manning ,  David D. Smith ,  Ann Waldhauer

发明人： Tim Dennis ,  Scott Harrington ,  Jane Manning ,  David D. Smith ,  Ann Waldhauer

IPC分类号： H01L31/0368 ,  H01L31/0216

CPC分类号： H01L31/03921 ,  H01L31/0216 ,  H01L31/02168 ,  H01L31/0236 ,  H01L31/03682 ,  H01L31/068 ,  H01L31/0745 ,  H01L31/1804 ,  H01L31/182 ,  H01L31/1864 ,  H01L31/1872 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

摘要： Method of fabricating solar cells with tunnel dielectric layers are described. Solar cells with tunnel dielectric layers are also described.

摘要翻译： 描述了用隧道介电层制造太阳能电池的方法。 还描述了具有隧道介电层的太阳能电池。