Invention Application
- Patent Title: METHOD OF DETERMINING CRITICAL-DIMENSION-RELATED PROPERTIES, INSPECTION APPARATUS AND DEVICE MANUFACTURING METHOD
- Patent Title (中): 确定关键尺寸相关特性的方法,检查装置和装置制造方法
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Application No.: US14892176Application Date: 2014-05-23
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Publication No.: US20160116849A1Publication Date: 2016-04-28
- Inventor: Hugo Augustinus Joseph CRAMER , Arie Jeffrey DEN BOEF , Henricus Johannes Lambertus MEGENS , Maurits VAN DER SCHAAR , Te-Chih HUANG
- Applicant: ASML NETHERLANDS B.V.
- Applicant Address: NL Veldhoven
- Assignee: ASML Netherlands B.V.
- Current Assignee: ASML Netherlands B.V.
- Current Assignee Address: NL Veldhoven
- International Application: PCT/EP2014/060625 WO 20140523
- Main IPC: G03F7/20
- IPC: G03F7/20

Abstract:
A method of determining a critical-dimension-related property, such as critical dimension (CD) or exposure dose, includes illuminating each of a plurality of periodic targets having different respective critical dimension biases, measuring intensity of radiation scattered by the targets, recognizing and extracting each grating from the image, determining a differential signal, and determining the CD-related property based on the differential signal, the CD biases and knowledge that the differential signal approximates to zero at a 1:1 line-to-space ratio of such periodic targets. Use of the determined CD-related property to control a lithography apparatus in lithographic processing of subsequent substrates. In order to use just two CD biases, a calibration may use measurements on a “golden wafer” (i.e. a reference substrate) to determine the intensity gradient for each of the CD pairs, with known CDs. Alternatively, the calibration can be based upon simulation of the sensitivity of intensity gradient to CD.
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