公开(公告)号：US20160349627A1

公开(公告)日：2016-12-01

申请号：US15117409

申请日：2015-01-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Maurits VAN DER SCHAAR ,  Arie Jeffrey DEN BOEF ,  Omer Abubaker Omer ADAM ,  Te-Chih HUANG ,  Youping ZHANG

IPC: G03F7/20 ,  G01N21/88 ,  G01N21/47

CPC classification number: G03F7/70633 ,  G01N21/47 ,  G01N21/8806 ,  G01N2201/12 ,  G03F7/70683

Abstract: There is disclosed a method of measuring a process parameter for a manufacturing process involving lithography. In a disclosed arrangement the method comprises performing first and second measurements of overlay error in a region on a substrate, and obtaining a measure of the process parameter based on the first and second measurements of overlay error. The first measurement of overlay error is designed to be more sensitive to a perturbation in the process parameter than the second measurement of overlay error by a known amount.

Abstract translation: 公开了一种测量涉及光刻的制造工艺的工艺参数的方法。 在公开的布置中，该方法包括对基板上的区域中的覆盖误差执行第一和第二测量，并且基于重叠误差的第一和第二测量值获得处理参数的度量。 重叠误差的第一次测量被设计为对过程参数中的扰动比已知量的覆盖误差的第二次测量更敏感。

公开(公告)号：US20170052454A1

公开(公告)日：2017-02-23

申请号：US15240781

申请日：2016-08-18

Applicant: ASML NETHERLANDS B.V.

Inventor： Martin Jacobus Johan JAK ,  Hendrik Jan Hidde SMILDE ,  Te-Chih HUANG ,  Victor Emanuel CALADO ,  Henricus Wilhelmus Maria VAN BUEL ,  Richard Johannes Franciscus VAN HAREN

IPC: G03F7/20

CPC classification number: G03F7/7065 ,  G03F7/70633 ,  G03F7/70683

Abstract: A substrate has a plurality of overlay gratings formed thereon by a lithographic process. Each overlay grating has a known overlay bias. The values of overlay bias include for example two values in a region centered on zero and two values in a region centered on P/2, where P is the pitch of the gratings. Overlay is calculated from asymmetry measurements for the gratings using knowledge of the different overlay bias values, each of the overall asymmetry measurements being weighted by a corresponding weight factor. Each one of the weight factors represents a measure of feature asymmetry within the respective overlay grating. The calculation is used to improve subsequent performance of the measurement process, and/or the lithographic process. Some of the asymmetry measurements may additionally be weighted by a second weight factor in order to eliminate or reduce the contribution of phase asymmetry to the overlay.

Abstract translation: 衬底具有通过光刻工艺在其上形成的多个覆盖光栅。 每个覆盖光栅具有已知的叠加偏置。 叠加偏置的值包括例如在以P为中心的区域中的零点和两个值的区域中的两个值，其中P是光栅的间距。 使用不同覆盖偏差值的知识，对光栅的不对称测量计算叠加，每个整体不对称测量由相应的权重因子加权。 每个权重因子表示相应覆盖光栅内的特征不对称的度量。 该计算用于提高测量过程和/或光刻过程的后续性能。 另外可以通过第二加权因子来加权一些不对称测量值，以消除或减少相位不对称对叠加层的贡献。

公开(公告)号：US20160116849A1

公开(公告)日：2016-04-28

申请号：US14892176

申请日：2014-05-23

Applicant: ASML NETHERLANDS B.V.

Inventor： Hugo Augustinus Joseph CRAMER ,  Arie Jeffrey DEN BOEF ,  Henricus Johannes Lambertus MEGENS ,  Maurits VAN DER SCHAAR ,  Te-Chih HUANG

IPC: G03F7/20

CPC classification number: G03F7/70133 ,  G03F7/70625 ,  G03F7/70683

Abstract: A method of determining a critical-dimension-related property, such as critical dimension (CD) or exposure dose, includes illuminating each of a plurality of periodic targets having different respective critical dimension biases, measuring intensity of radiation scattered by the targets, recognizing and extracting each grating from the image, determining a differential signal, and determining the CD-related property based on the differential signal, the CD biases and knowledge that the differential signal approximates to zero at a 1:1 line-to-space ratio of such periodic targets. Use of the determined CD-related property to control a lithography apparatus in lithographic processing of subsequent substrates. In order to use just two CD biases, a calibration may use measurements on a “golden wafer” (i.e. a reference substrate) to determine the intensity gradient for each of the CD pairs, with known CDs. Alternatively, the calibration can be based upon simulation of the sensitivity of intensity gradient to CD.

Abstract translation: 确定临界尺寸相关性质（例如临界尺寸（CD）或曝光剂量）的方法包括照射具有不同的相应临界尺寸偏差的多个周期性靶标中的每一个，测量由靶标散射的辐射的强度，识别和 从图像中提取每个光栅，确定差分信号，并且基于差分信号确定CD相关属性，CD偏差和差分信号以这样的1：1线间比接近零的知识 定期目标。 使用确定的CD相关属性来控制光刻设备在后续基板的光刻处理中。 为了仅使用两个CD偏移，校准可以使用“金色晶片”（即，参考基底）上的测量来确定具有已知CD的每个CD对的强度梯度。 或者，校准可以基于对CD的强度梯度的灵敏度的模拟。