公开(公告)号：US20240404036A1

公开(公告)日：2024-12-05

申请号：US18802614

申请日：2024-08-13

Applicant: ASML Netherlands B.V.

Inventor： Teunis Willem TUKKER ,  Arie Jeffrey DEN BOEF ,  Nitesh PANDEY ,  Marinus Petrus REIJNDERS ,  Ferry ZIJP

IPC: G06T7/00 ,  G01N21/47 ,  G02B5/30 ,  G02B27/28 ,  G02B27/42 ,  G03F7/00

Abstract: Disclosed is a detection apparatus for simultaneous acquisition of multiple images of an object at a plurality of different focus levels; comprising: a modulator for obtaining multiple beam copies of an incoming beam; and a detector operable to capture said multiple beam copies, such that at two of said multiple beam copies are captured at different focus levels. Also disclosed is an inspection apparatus comprising such a detection system.

公开(公告)号：US20240319620A1

公开(公告)日：2024-09-26

申请号：US18650790

申请日：2024-04-30

Applicant: ASML Netherlands B.V.

Inventor： Patricius Aloysius Jacobus TINNEMANS ,  Arie Jeffrey DEN BOEF ,  Armand Eugene Albert KOOLEN ,  Nitesh PANDEY ,  Vasco Tomas TENNER ,  Willem Marie Julia Marcel COENE ,  Patrick WARNAAR

IPC: G03F7/00 ,  G01B11/02 ,  G01B11/06 ,  G01N21/47 ,  G01N21/95 ,  G03F9/00

CPC classification number: G03F7/7085 ,  G01B11/02 ,  G01B11/0625 ,  G01N21/4788 ,  G01N21/9501 ,  G03F7/70158 ,  G03F7/705 ,  G03F7/70625 ,  G03F7/70633 ,  G03F9/7088 ,  G01B2210/56

Abstract: Described is a metrology system for determining a characteristic of interest relating to at least one structure on a substrate, and associated method. The metrology system comprises a processor being configured to computationally determine phase and amplitude information from a detected characteristic of scattered radiation having been reflected or scattered by the at least one structure as a result of illumination of said at least one structure with illumination radiation in a measurement acquisition, and use the determined phase and amplitude to determine the characteristic of interest.

公开(公告)号：US20220342228A1

公开(公告)日：2022-10-27

申请号：US17764057

申请日：2020-09-27

Applicant: ASML Netherlands B.V. ,  ASML Holding N.V.

Inventor： Irwan Dani SETIJA ,  Arie Jeffrey DEN BOEF ,  Mohamed SWILLAM ,  Arjan Johannes Anton BEUKMAN

IPC: G02B27/48 ,  G02F1/295 ,  G03F7/20

Abstract: A system includes a radiation source and a phased array. The phased array includes optical elements, waveguides and phase modulators. The phased array generates a beam of radiation. The optical elements radiate radiation waves. The waveguides guide radiation from the radiation source to the optical elements. The phase modulators adjust phases of the radiation waves such that the radiation waves accumulate to form the beam. An amount of incoherence of the beam is based on randomization of the phases.

公开(公告)号：US20220299751A1

公开(公告)日：2022-09-22

申请号：US17633882

申请日：2020-07-27

Applicant: ASML Netherlands B.V.

Inventor： Arie Jeffrey DEN BOEF ,  Simon HUISMAN

IPC: G02B26/06 ,  G03F9/00 ,  G02F1/11

Abstract: Disclosed is a phase modulator apparatus comprises at least a first phase modulator for modulating input radiation, and a metrology device comprising such a phase modulator apparatus. The first phase modulator comprises a first moving grating in at least an operational state for diffracting the input radiation and Doppler shifting the frequency of the diffracted radiation; and a first compensatory grating element comprising a pitch configured to compensate for wavelength dependent dispersion of at least one diffraction order of said diffracted radiation.

公开(公告)号：US20210357570A1

公开(公告)日：2021-11-18

申请号：US17389682

申请日：2021-07-30

Applicant: ASML NETHERLANDS B.V.

Inventor： Christophe David FOUQUET ,  Bernardo KASTRUP ,  Arie Jeffrey DEN BOEF ,  Johannes Catharinus Hubertus MULKENS ,  James Benedict KAVANAGH ,  James Patrick KOONMEN ,  Neal Patrick CALLAN

IPC: G06F30/398 ,  H01L21/66 ,  G03F7/20 ,  G06F30/20 ,  G06N7/00

Abstract: A defect prediction method for a device manufacturing process involving processing a portion of a design layout onto a substrate, the method including: identifying a hot spot from the portion of the design layout; determining a range of values of a processing parameter of the device manufacturing process for the hot spot, wherein when the processing parameter has a value outside the range, a defect is produced from the hot spot with the device manufacturing process; determining an actual value of the processing parameter; determining or predicting, using the actual value, existence, probability of existence, a characteristic, or a combination thereof, of a defect produced from the hot spot with the device manufacturing process.

公开(公告)号：US20210255553A1

公开(公告)日：2021-08-19

申请号：US17306670

申请日：2021-05-03

Applicant: ASML Netherlands B.V.

Inventor： Zili ZHOU ,  Nitesh PANDEY ,  Olger Victor ZWIER ,  Patrick WARNAAR ,  Maurits VAN DER SCHAAR ,  Elliott Gerard MC NAMARA ,  Arie Jeffrey DEN BOEF ,  Paul Christiaan HINNEN ,  Murat BOZKURT ,  Joost Jeroen OTTENS ,  Kaustuve BHATTACHARYYA ,  Michael KUBIS

IPC: G03F7/20 ,  G01N21/47 ,  G01N21/95 ,  G01N21/956 ,  G03F9/00

Abstract: A method of measuring overlay uses a plurality of asymmetry measurements from locations (LOI) on a pair of sub-targets (1032, 1034) formed on a substrate (W). For each sub-target, the plurality of asymmetry measurements are fitted to at least one expected relationship (1502, 1504) between asymmetry and overlay, based on a known bias variation deigned into the sub-targets. Continuous bias variation in one example is provided by varying the pitch of top and bottom gratings (P1/P2). Bias variations between the sub-targets of the pair are equal and opposite (P2/P1). Overlay (OV) is calculated based on a relative shifht (xs) between the fitted relationships for the two sub-targets. The step of fitting asymmetry measurements to at least one expected relationship includes wholly or partially discounting measurements (1506, 1508, 1510) that deviate from the expected relationship and/or fall outside a particular segment of the fitted relationship.

公开(公告)号：US20190187573A1

公开(公告)日：2019-06-20

申请号：US16326410

申请日：2017-07-28

Applicant: ASML Netherlands B.V.

Inventor： Hendrikus Herman Marie COX ,  Paul Corné Henri DE WIT ,  Arie Jeffrey DEN BOEF ,  Adrianus Hendrik KOEVOETS ,  Jim Vincent OVERKAMP ,  Frits VAN DER MEULEN ,  Jacobus Cornelis Gerardus VAN DER SANDEN

IPC: G03F7/20

CPC classification number: G03F7/70875 ,  G03F7/70433 ,  G03F7/70625 ,  G03F7/70783

Abstract: A lithographic apparatus comprises a projection system which is configured to project a patterned radiation beam to form an exposure area on a substrate held on a substrate table. The lithographic apparatus further comprises a heating apparatus comprises one or more radiation sources configured to provide additional radiation beams which illuminate and heat part of the substrate during the exposure.

公开(公告)号：US20190137893A1

公开(公告)日：2019-05-09

申请号：US16181455

申请日：2018-11-06

Applicant: ASML Netherlands B.V.

Inventor： Arie Jeffrey DEN BOEF ,  Ronald Joseph Antonius Van Den Oetelaar

IPC: G03F7/20 ,  G03F9/00 ,  G01N21/47 ,  G01N21/21

Abstract: A metrology apparatus for and a method of determining a characteristic of interest relating to at least one structure on a substrate. The metrology apparatus comprises a sensor and an optical system. The sensor is for detecting characteristics of radiation impinging on the sensor. The optical system comprises an illumination path and a detection path. The optical system is configured to illuminate the at least one structure with radiation received from a source via the illumination path. The optical system is configured to receive radiation scattered by the at least one structure and to transmit the received radiation to the sensor via the detection path.

公开(公告)号：US20180373166A1

公开(公告)日：2018-12-27

申请号：US16007112

申请日：2018-06-13

Applicant: ASML Netherlands B.V.

Inventor： Gonzalo Roberto SANGUINETTI ,  Murat BOZKURT ,  Maurits VAN DER SCHAAR ,  Arie Jeffrey DEN BOEF

IPC: G03F7/20 ,  G01B11/27

Abstract: Overlay error of a lithographic process is measured using a plurality of target structures, each target structure having a known overlay bias. A detection system captures a plurality of images (740) representing selected portions of radiation diffracted by the target structures under a plurality of different capture conditions (λ1, λ2). Pixel values of the captured images are combined (748) to obtain one or more synthesized images (750). A plurality of synthesized diffraction signals are extracted (744) from the synthesized image or images, and used to calculate a measurement of overlay. The computational burden is reduced compared with extracting diffraction signals from the captured images individually. The captured images may be dark-field images or pupil images, obtained using a scatterometer.

公开(公告)号：US20180149987A1

公开(公告)日：2018-05-31

申请号：US15575069

申请日：2016-03-14

Applicant: ASML Netherlands B.V.

Inventor： Simon Gijsbert Josephus MATHIJSSEN ,  Arie Jeffrey DEN BOEF ,  Alessandro POLO ,  Patricius Aloysius Jacobus TINNEMANS ,  Adrianus Johannes Hendrikus SCHELLEKENS ,  Elahe YEGANEGI DASTGERDI ,  Willem Marie Julia Marcel COENE ,  Erik Willem BOGAART ,  Simon Reinald HUISMAN

IPC: G03F9/00 ,  G03F7/20

Abstract: An alignment system, method and lithographic apparatus are provided for determining the position of an alignment mark, the alignment system comprising a first system configured to produce two overlapping images of the alignment mark that are rotated by around 180 degrees with respect to one another, and a second system configured to determine the position of the alignment mark from a spatial distribution of an intensity of the two overlapping images.