Invention Application
- Patent Title: PLASMA PROCESSING APPARATUS
- Patent Title (中): 等离子体加工设备
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Application No.: US14868554Application Date: 2015-09-29
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Publication No.: US20160118224A1Publication Date: 2016-04-28
- Inventor: Masayuki KOHNO , Ryou SON , Naoki MATSUMOTO , Jun YOSHIKAWA , Michitaka AITA , Ippei SHIMIZU , Yusuke YOSHIDA , Koji KOYAMA , Masami SUDAYAMA , Yukiyoshi ARAMAKI
- Applicant: Tokyo Electron Limited
- Priority: JP2014-218625 20141027
- Main IPC: H01J37/32
- IPC: H01J37/32

Abstract:
A plasma processing apparatus is provided that is configured to supply a gas into a chamber, generate a plasma from the gas using a power of an electromagnetic wave, and perform a predetermined plasma process on a substrate that is held by a mounting table. The plasma processing apparatus includes a dielectric window through which the electromagnetic wave that is output from an electromagnetic wave generator is propagated and transmitted into the chamber, a support member that supports the dielectric window, a partition member that separates a space where the support member is arranged from a plasma generation space and includes a protrusion abutting against the dielectric window, and a conductive member that is arranged between the partition member and the dielectric window and is protected from being exposed to the plasma generation space by the protrusion.
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