公开(公告)号：US20150109716A1

公开(公告)日：2015-04-23

申请号：US14519903

申请日：2014-10-21

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masahiko KONNO ,  Masayuki SHINTAKU ,  Takashi SUZUKI ,  Michitaka AITA ,  Taizo OKADA ,  Naohiko OKUNISHI ,  Hideo KATO ,  Naoki MATSUMOTO

IPC: H01L21/683

CPC classification number: H01L21/6831 ,  H01J37/32192 ,  H01J37/32311 ,  H01J37/32577 ,  H01J37/32715 ,  H01J37/32724 ,  H01L21/67103

Abstract: A plasma processing apparatus includes a mounting table including a lower electrode and an electrostatic chuck, a high frequency power supply electrically connected to the lower electrode, a heater provided in the electrostatic chuck, a heater power supply for supplying a power to the heater, a filter unit including a filter connected to the heater power supply, a rod-shaped power feeder connecting the heater power supply and the heater via the filter, an insulating tubular portion having an inner hole through which the power feeder extends, and a conductive choke portion serving to suppress a microwave propagating through the tubular portion. The choke portion includes a first portion extending from the power feeder in a direction intersecting with a longitudinal direction of the power feeder and a cylindrical second portion extending, between the tubular portion and the power feeder, from a peripheral portion of the first portion.

Abstract translation: 等离子体处理装置包括：安装台，包括下电极和静电卡盘;电连接到下电极的高频电源;设置在静电卡盘中的加热器;向加热器供电的加热器电源; 过滤器单元，包括连接到加热器电源的过滤器，经由过滤器连接加热器电源和加热器的棒状供电器，具有供电器延伸穿过的内孔的绝缘管状部分和导电阻塞部分 用于抑制通过管状部分传播的微波。 扼流部包括从与馈电装置的长度方向交叉的方向从电力馈送器延伸的第一部分，以及在第一部分的周边部分之间延伸的管状部分和供电线之间的圆柱形第二部分。

公开(公告)号：US20160126114A1

公开(公告)日：2016-05-05

申请号：US14883287

申请日：2015-10-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masayuki KOHNO ,  Yusuke YOSHIDA ,  Naoki MATSUMOTO ,  Ippei SHIMIZU ,  Naoki MIHARA ,  Jun YOSHIKAWA ,  Michitaka AITA ,  Yoshikazu AZUMAYA ,  Junsuke HOSHIYA

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/687

CPC classification number: H01J37/32192 ,  H01J37/3222 ,  H01J37/32238 ,  H01J37/32449 ,  H01J37/32495

Abstract: A plasma processing apparatus includes a processing chamber, a table disposed in the processing chamber, a dielectric window provided at the processing chamber, and a surrounding body made of a dielectric material surrounding a processing space between the table and the dielectric window. The dielectric window and the surrounding body are separated from each other in a vertical direction with a predetermined gap therebetween.

Abstract translation: 等离子体处理装置包括处理室，设置在处理室中的工作台，设置在处理室的介质窗，以及由围绕工作台和电介质窗之间的处理空间的介电材料制成的围绕体。 电介质窗和周围体在垂直方向上彼此隔开预定的间隙。

公开(公告)号：US20140238607A1

公开(公告)日：2014-08-28

申请号：US14187466

申请日：2014-02-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Toshihisa NOZAWA ,  Jun YOSHIKAWA ,  Michitaka AITA ,  Masahiro YAMAZAKI ,  Takehisa SAITO ,  Fumihiko KAJI ,  Koji YAMAGISHI

IPC: H01J37/32

CPC classification number: H01J37/32192 ,  H01J37/32229 ,  H01J37/3244

Abstract: A plasma processing apparatus includes a processing chamber configured to partition a processing space and a microwave generator configured to generate microwaves for plasma excitation. Further, the plasma processing apparatus includes a dielectric member mounted in the processing chamber so as to seal the processing space, and configured to introduce the microwaves generated by the microwave generator into the processing space. Further, the plasma processing apparatus includes an injector mounted in the dielectric member, and configured to supply the processing gas made in a plasma state due to the microwaves to the processing space through a through-hole formed in the dielectric member. Further, the plasma processing apparatus includes a waveguide plate made of a dielectric material mounted in the injector so as to surround the through-hole of the dielectric member, and configured to guide the microwaves propagated into the dielectric member toward the through-hole to an inside of the injector.

Abstract translation: 等离子体处理装置包括：处理室，被配置为分隔处理空间;以及微波发生器，被配置为产生用于等离子体激发的微波。 此外，等离子体处理装置包括安装在处理室中的电介质部件，以密封处理空间，并且将微波发生器产生的微波引入处理空间。 此外，等离子体处理装置包括安装在电介质构件中的喷射器，并且构造成通过形成在电介质构件中的通孔将由微波产生的等离子体状态的处理气体提供给处理空间。 此外，等离子体处理装置包括由安装在喷射器中的电介质材料构成的波导板，以便围绕电介质构件的通孔，并被构造成将传播到电介质构件中的微波朝向通孔引导至 注射器内部

公开(公告)号：US20190096750A1

公开(公告)日：2019-03-28

申请号：US16144311

申请日：2018-09-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yumiko KAWANO ,  Shuji AZUMO ,  Hiroki MURAKAMI ,  Michitaka AITA ,  Tadahiro ISHIZAKA ,  Koji AKIYAMA ,  Yusaku KASHIWAGI ,  Hajime NAKABAYASHI

IPC: H01L21/768

Abstract: A method of selectively forming a thin film on a substrate to be processed in which a conductive film and an insulating film are exposed to a surface of the substrate includes: selectively forming a first Ru film only on a first surface, which is an exposed surface of the conductive film and formed of one of Ru, RuO2, Pt, Pd, CuO, and CuO2, using an Ru(EtCp)2 gas and an O2 gas; and selectively forming a first SiO2-containing insulating film only on a second surface, which is an exposed surface of the insulating film has OH groups, by performing one or more times a process of supplying a TMA gas to the substrate to adsorb TMA only to the second surface and a process of forming an SiO2 film only on a surface of the adsorbed TMA using a silanol group-containing silicon raw material and an oxidizing agent.

公开(公告)号：US20170229286A1

公开(公告)日：2017-08-10

申请号：US15421630

申请日：2017-02-01

Applicant: TOKYO ELECTRON LIMITED

Inventor： Michitaka AITA ,  Naoki MATSUMOTO

IPC: H01J37/32

Abstract: Disclosed is a plasma processing apparatus including: a processing container into which an electromagnetic wave for plasma excitation is supplied; a placing table provided inside the processing container and configured to place a workpiece thereon; a first coupling member inserted into each of a plurality of insertion portions formed in a part of a dielectric member that transmits the electromagnetic wave, among a plurality of members that constitute the placing table, and configured to couple the dielectric member and a member to be coupled; and a dielectric cap fitted to each of the plurality of insertion portions so as to cover the first coupling member and having a dielectric constant substantially equal to the dielectric constant of the dielectric member.

公开(公告)号：US20150211125A1

公开(公告)日：2015-07-30

申请号：US14605338

申请日：2015-01-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jun YOSHIKAWA ,  Michitaka AITA

IPC: C23C16/511

CPC classification number: C23C16/511 ,  C23C16/345 ,  H01J37/32192 ,  H01J37/3222

Abstract: Disclosed is provides a plasma processing apparatus that processes a workpiece. The plasma processing apparatus includes: a processing container configured to accommodate the workpiece; a coaxial waveguide configured to transmit microwaves generated in a microwave generator; and a slow wave plate configured to adjust a wavelength of the microwaves transmitted from the coaxial waveguide and to introduce the microwaves into the processing container. A lower end portion of an inner conductor of the coaxial waveguide has a tapered shape of which a diameter increases downwardly, the slow wave plate has an annular shape in a plan view, and the inner surface of the slow wave plate encloses the lower end portion of the inner conductor and is located more outside than an inner surface of an outer conductor of the coaxial waveguide in a radial direction.

Abstract translation: 公开了一种处理工件的等离子体处理装置。 等离子体处理装置包括：处理容器，其构造成容纳工件; 同轴波导，被配置为发送在微波发生器中产生的微波; 以及慢波板，被配置为调节从同轴波导传输的微波的波长并将微波引入处理容器。 同轴波导的内导体的下端部具有直径向下增大的锥形形状，慢波板在俯视图中呈环状，慢波板的内表面包围下端部 并且位于比同轴波导的外导体的径向外侧更外侧的位置。

公开(公告)号：US20240079208A1

公开(公告)日：2024-03-07

申请号：US18240010

申请日：2023-08-30

Applicant: Tokyo Electron Limited

Inventor： Takeshi KOBAYASHI ,  Michitaka AITA

IPC: H01J37/32

CPC classification number: H01J37/32091 ,  H01J37/32568 ,  H01J37/32834

Abstract: A plasma processing apparatus includes: a processing container; a substrate holding unit that disposes a plurality of substrates in multiple tiers and is inserted into the processing container; a rotary shaft that rotates the substrate holding unit; a gas supply unit that supplies a processing gas into the processing container; an exhaust unit that exhausts the inside of the processing container; a plurality of electrodes disposed on the outer side of the processing container and arranged in the circumferential direction of the processing container; and a radio-frequency power supply that applies a radio-frequency power to the plurality of electrodes, thereby generating capacitively coupled plasma in the processing container.

公开(公告)号：US20150294839A1

公开(公告)日：2015-10-15

申请号：US14681161

申请日：2015-04-08

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroyuki TAKABA ,  Tetsuya NISHIZUKA ,  Naoki MATSUMOTO ,  Michitaka AITA ,  Takashi MINAKAWA ,  Kazuki TAKAHASHI ,  Jun YOSHIKAWA ,  Motoshi FUKUDOME ,  Naoki MIHARA ,  Hiroyuki KONDO

IPC: H01J37/32

CPC classification number: H01J37/3244 ,  H01J37/3222

Abstract: Disclosed is a plasma processing apparatus including a processing container, a placing table, a central introduction section, and a peripheral introduction section. The central introduction section is provided above the placing table. The central introduction introduces a gas toward the placing table along the axis passing through a center of the placing table. The peripheral introduction section is provided between the central introduction section and a top surface of the placing table in a height direction. In addition, the peripheral introduction section is formed along a side wall. The peripheral introduction section provides a plurality of gas ejection ports arranged in a circumferential direction with respect to the axis. The plurality of gas ejection ports of the peripheral introduction section extend away from the placing table as the gas ejection ports come close to the axis.

Abstract translation: 公开了一种等离子体处理装置，其包括处理容器，放置台，中央引入部和周边引入部。 中心介绍部分在放置台上方提供。 中心介绍沿着穿过放置台的中心的轴线向放置台引入气体。 周边引入部设置在中心引导部和放置台的上表面之间的高度方向。 另外，周边导入部沿着侧壁形成。 周边引入部分提供沿相对于轴线沿圆周方向布置的多个气体喷射口。 当气体喷射口靠近轴线时，周边引入部分的多个气体喷射口远离放置台延伸。

公开(公告)号：US20150107773A1

公开(公告)日：2015-04-23

申请号：US14519688

申请日：2014-10-21

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masayuki SHINTAKU ,  Takashi SUZUKI ,  Masahiko KONNO ,  Michitaka AITA ,  Taizo OKADA ,  Hideo KATO

IPC: H01J37/32

CPC classification number: H01J37/32642 ,  H01J37/32192 ,  H01J37/32275

Abstract: A plasma processing apparatus for exciting a processing gas by a microwave, includes a focus ring extending in an annular shape, a first tubular member being wrapped around a central axis to extend along an outer periphery of the lower electrode below the focus ring, an annular member made of a dielectric material provided between the focus ring and the first tubular member a second tubular member extending along an outer periphery of the first tubular member and a choke portion suppressing a microwave propagating through the first tubular member via the focus ring and the annular member. And the choke portion protrudes outward in a diametrical direction of the first tubular from the outer periphery of the first tubular member and extends in an annular shape along the periphery of the first tubular member, the choke portion is covered by the second tubular member.

Abstract translation: 一种用于通过微波激发处理气体的等离子体处理装置，包括以环形形状延伸的聚焦环，围绕中心轴缠绕的第一管状部件沿着聚焦环下方的下部电极的外周延伸，环状 由设置在聚焦环和第一管状构件之间的介电材料制成的构件，沿着第一管状构件的外周延伸的第二管状构件和抑制经由聚焦环传播通过第一管状构件的微波的扼流圈， 会员。 并且所述扼流部从所述第一管状部件的外周沿所述第一管状体的直径方向向外突出，并且沿着所述第一管状部件的周缘呈环状延伸，所述扼流部被所述第二管状部件覆盖。

公开(公告)号：US20220178031A1

公开(公告)日：2022-06-09

申请号：US17594371

申请日：2020-04-06

Applicant: Tokyo Electron Limited

Inventor： Michitaka AITA ,  Ken ITABASHI ,  Ryota IFUKU ,  Takaaki KATO ,  Kazuki YAMADA

IPC: C23C16/48 ,  C23C16/455 ,  C23C16/52 ,  C23C16/40

Abstract: A film formation method includes: adsorbing a precursor of a film-forming raw material gas onto a surface of a substrate on which a film is to be formed by irradiating an interior of a processing container with ultraviolet light which has a first wavelength and separates a predetermined bond of the raw material gas while supplying the raw material gas into the processing container in which the substrate is disposed; and forming a layer, in which the precursor and a reaction gas react on the surface of the substrate, by supplying the reaction gas into the processing container.