公开(公告)号：US20160118224A1

公开(公告)日：2016-04-28

申请号：US14868554

申请日：2015-09-29

Applicant: Tokyo Electron Limited

Inventor： Masayuki KOHNO ,  Ryou SON ,  Naoki MATSUMOTO ,  Jun YOSHIKAWA ,  Michitaka AITA ,  Ippei SHIMIZU ,  Yusuke YOSHIDA ,  Koji KOYAMA ,  Masami SUDAYAMA ,  Yukiyoshi ARAMAKI

IPC: H01J37/32

CPC classification number: H01J37/32192 ,  H01J37/32266 ,  H01J37/32944

Abstract: A plasma processing apparatus is provided that is configured to supply a gas into a chamber, generate a plasma from the gas using a power of an electromagnetic wave, and perform a predetermined plasma process on a substrate that is held by a mounting table. The plasma processing apparatus includes a dielectric window through which the electromagnetic wave that is output from an electromagnetic wave generator is propagated and transmitted into the chamber, a support member that supports the dielectric window, a partition member that separates a space where the support member is arranged from a plasma generation space and includes a protrusion abutting against the dielectric window, and a conductive member that is arranged between the partition member and the dielectric window and is protected from being exposed to the plasma generation space by the protrusion.

Abstract translation: 提供了一种等离子体处理装置，其被配置为将气体供应到室中，使用电磁波的功率从气体产生等离子体，并且在由安装台保持的基板上执行预定的等离子体处理。 等离子体处理装置包括电介质窗，从电磁波发生器输出的电磁波通过该介质传播并传递到室内;支撑构件，其支撑介电窗口;分隔构件，其将支撑构件的空间 从等离子体产生空间排列并且包括抵靠电介质窗口的突起，以及布置在分隔构件和电介质窗口之间的导电构件，并且被保护以通过突起而暴露于等离子体产生空间。