Invention Application
- Patent Title: Low Form Voltage Resistive Random Access Memory (RRAM)
- Patent Title (中): 低压电阻随机存取存储器（RRAM）
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Application No.: US14987621Application Date: 2016-01-04
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Publication No.: US20160118584A1Publication Date: 2016-04-28
- Inventor: Chin-Chieh Yang , Wen-Ting Chu , Yu-Wen Liao , Chih-Yang Chang , Hsia-Wei Chen , Kuo-Chi Tu , Ching-Pei Hsieh
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Main IPC: H01L45/00
- IPC: H01L45/00 ; H01L27/24
Abstract:
The present disclosure provides a resistive random access memory (RRAM) cells and methods of making the same. The RRAM cell includes a transistor and an RRAM structure. The RRAM structure includes a bottom electrode having a via portion and a non-planar portion, a resistive material layer conformally covering the non-planar portion of the bottom electrode; and, a top electrode on the resistive material layer. The via portion of the bottom electrode is embedded in a first RRAM stop layer. The non-planar portion of the bottom electrode has an apex and is centered above the via portion.
Public/Granted literature
- US09466794B2 Low form voltage resistive random access memory (RRAM) Public/Granted day:2016-10-11
Information query
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