Invention Application
- Patent Title: TRANSISTOR STRUCTURES AND FABRICATION METHODS THEREOF
- Patent Title (中): 晶体管结构及其制造方法
-
Application No.: US14526831Application Date: 2014-10-29
-
Publication No.: US20160126316A1Publication Date: 2016-05-05
- Inventor: Xusheng WU , Jin Ping LIU , Min-hwa CHI
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Main IPC: H01L29/165
- IPC: H01L29/165 ; H01L29/737 ; H01L21/324 ; H01L29/66 ; H01L29/167 ; H01L21/02 ; H01L29/78 ; H01L29/08

Abstract:
Transistor structures and methods of fabricating transistor structures are provided. The methods include: fabricating a transistor structure at least partially within a substrate, the fabricating including: providing a cavity within the substrate; and forming a first portion and a second portion of the transistor structure at least partially within the cavity, the first portion being disposed at least partially between the substrate and the second portion, where the first portion inhibits diffusion of material from the second portion into the substrate. In one embodiment, the transistor structure is a field-effect transistor structure, and the first portion and the second portion include one of a source region or a drain region of the field-effect transistor structure. In another embodiment, the transistor structure is a bipolar junction transistor structure.
Public/Granted literature
- US09647073B2 Transistor structures and fabrication methods thereof Public/Granted day:2017-05-09
Information query
IPC分类: