发明申请
- 专利标题： Wiring Structures and Methods of Forming the Same
- 专利标题（中）： 接线结构及其形成方法
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申请号： US15000282申请日： 2016-01-19
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公开(公告)号： US20160133577A1公开(公告)日： 2016-05-12
- 发明人: Jong-Min Baek , Sang-Ho Rha , Woo-Kyung You , Sang-Hoon Ahn , Nae-In Lee , Ki-Chul Kim , Jeon-Il Lee
- 申请人： Samsung Electronics Co., Ltd.
- 优先权： KR10-2013-0161485 20131223
- 主分类号： H01L23/532
- IPC分类号： H01L23/532 ; H01L23/522
摘要：
A wiring structure includes a first insulation layer, a plurality of wiring patterns, a protection layer pattern and a second insulation layer. The first insulation layer may be formed on a substrate. A plurality of wiring patterns may be formed on the first insulation layer, and each of the wiring patterns may include a metal layer pattern and a barrier layer pattern covering a sidewall and a bottom surface of the metal layer pattern. The protection layer pattern may cover a top surface of each of the wiring patterns and including a material having a high reactivity with respect to oxygen. The protection layer pattern may cover a top surface of each of the wiring patterns and including a material having a high reactivity with respect to oxygen.
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