公开(公告)号：US20180320267A1

公开(公告)日：2018-11-08

申请号：US16031349

申请日：2018-07-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ki-Chul Kim ,  Jung-Il Ahn ,  Jung-Hun Seo ,  Jong-Cheol Lee ,  Kyu-Hee Han ,  Seung-Han Lee ,  Jin-Pil Heo

IPC: C23C16/455 ,  C23C16/44

CPC classification number: C23C16/45574 ,  C23C16/4412 ,  C23C16/45519 ,  C23C16/45551 ,  C23C16/45565

Abstract: A gas injection apparatus, which can sequentially supply a substrate with at least two kinds of source gases reacting with each other in a container, and thin film deposition equipment including the gas injection apparatus, are provided. The gas injection apparatus includes a base plate, a first gas supply region protruding from the base plate, a second gas supply region protruding from the base plate and adjacent the first gas supply region, and a trench defined by a sidewall of the first gas supply region and a sidewall of the second gas supply region. The sidewall of the first gas supply region and the sidewall of the second gas supply region face each other and extend in a radial direction on the base plate.

公开(公告)号：US10669631B2

公开(公告)日：2020-06-02

申请号：US16031349

申请日：2018-07-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ki-Chul Kim ,  Jung-Il Ahn ,  Jung-Hun Seo ,  Jong-Cheol Lee ,  Kyu-Hee Han ,  Seung-Han Lee ,  Jin-Pil Heo

IPC: C23C16/40 ,  C23C16/455 ,  C23C16/44

Abstract: A gas injection apparatus, which can sequentially supply a substrate with at least two kinds of source gases reacting with each other in a container, and thin film deposition equipment including the gas injection apparatus, are provided. The gas injection apparatus includes a base plate, a first gas supply region protruding from the base plate, a second gas supply region protruding from the base plate and adjacent the first gas supply region, and a trench defined by a sidewall of the first gas supply region and a sidewall of the second gas supply region. The sidewall of the first gas supply region and the sidewall of the second gas supply region face each other and extend in a radial direction on the base plate.

公开(公告)号：US20160133577A1

公开(公告)日：2016-05-12

申请号：US15000282

申请日：2016-01-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong-Min Baek ,  Sang-Ho Rha ,  Woo-Kyung You ,  Sang-Hoon Ahn ,  Nae-In Lee ,  Ki-Chul Kim ,  Jeon-Il Lee

IPC: H01L23/532 ,  H01L23/522

CPC classification number: H01L23/53238 ,  H01L21/7682 ,  H01L21/76834 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76879 ,  H01L21/76883 ,  H01L23/5222 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53223 ,  H01L23/53266 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2221/1063 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A wiring structure includes a first insulation layer, a plurality of wiring patterns, a protection layer pattern and a second insulation layer. The first insulation layer may be formed on a substrate. A plurality of wiring patterns may be formed on the first insulation layer, and each of the wiring patterns may include a metal layer pattern and a barrier layer pattern covering a sidewall and a bottom surface of the metal layer pattern. The protection layer pattern may cover a top surface of each of the wiring patterns and including a material having a high reactivity with respect to oxygen. The protection layer pattern may cover a top surface of each of the wiring patterns and including a material having a high reactivity with respect to oxygen.

Abstract translation: 布线结构包括第一绝缘层，多个布线图案，保护层图案和第二绝缘层。 第一绝缘层可以形成在基板上。 可以在第一绝缘层上形成多个布线图案，并且每个布线图案可以包括覆盖金属层图案的侧壁和底表面的金属层图案和阻挡层图案。 保护层图案可以覆盖每个布线图案的顶表面，并且包括相对于氧具有高反应性的材料。 保护层图案可以覆盖每个布线图案的顶表面，并且包括相对于氧具有高反应性的材料。

公开(公告)号：US09110233B2

公开(公告)日：2015-08-18

申请号：US13726346

申请日：2012-12-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ki-Chul Kim ,  Bong-Jin Kuh ,  Jung-Yun Won ,  Eun-Ha Lee ,  Han-Mei Choi

IPC: G02F1/035 ,  G02B6/122 ,  G02B6/124 ,  G02F1/025 ,  G02B6/132 ,  G02B6/12

CPC classification number: G02B6/13 ,  G02B6/122 ,  G02B6/124 ,  G02B6/131 ,  G02B6/132 ,  G02B2006/12061 ,  G02B2006/121 ,  G02B2006/12107 ,  G02B2006/12147 ,  G02F1/025 ,  G02F1/035 ,  H01L29/66477

Abstract: A semiconductor device includes a single crystalline substrate, an electrical element and an optical element. The electrical element is disposed on the single crystalline substrate. The electrical element includes a gate electrode extending in a crystal orientation and source and drain regions adjacent to the gate electrode. The source region and the drain region are arranged in a direction substantially perpendicular to a direction in which the gate electrode extends. The optical element is disposed on the single crystalline substrate. The optical element includes an optical waveguide extending in a crystal orientation .

Abstract translation: 半导体器件包括单晶衬底，电子元件和光学元件。 电元件设置在单晶衬底上。 电气元件包括以晶体取向<110>延伸的栅极电极和与栅电极相邻的源极和漏极区域。 源极区域和漏极区域布置在基本上垂直于栅电极延伸的方向的方向上。 光学元件设置在单晶衬底上。 光学元件包括以晶体取向<010>延伸的光波导。

公开(公告)号：US20150179582A1

公开(公告)日：2015-06-25

申请号：US14527842

申请日：2014-10-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong-Min Baek ,  Sang-Ho Rha ,  Woo-Kyung You ,  Sang-Hoon Ahn ,  Nae-In Lee ,  Ki-Chul Kim ,  Jeon-II Lee

IPC: H01L23/532 ,  H01L21/768 ,  H01L23/528

CPC classification number: H01L23/53238 ,  H01L21/7682 ,  H01L21/76834 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76879 ,  H01L21/76883 ,  H01L23/5222 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53223 ,  H01L23/53266 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2221/1063 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A wiring structure includes a first insulation layer, a plurality of wiring patterns, a protection layer pattern and a second insulation layer. The first insulation layer may be formed on a substrate. A plurality of wiring patterns may be formed on the first insulation layer, and each of the wiring patterns may include a metal layer pattern and a barrier layer pattern covering a sidewall and a bottom surface of the metal layer pattern. The protection layer pattern may cover a top surface of each of the wiring patterns and including a material having a high reactivity with respect to oxygen. The protection layer pattern may cover a top surface of each of the wiring patterns and including a material having a high reactivity with respect to oxygen.

Abstract translation: 布线结构包括第一绝缘层，多个布线图案，保护层图案和第二绝缘层。 第一绝缘层可以形成在基板上。 可以在第一绝缘层上形成多个布线图案，并且每个布线图案可以包括覆盖金属层图案的侧壁和底表面的金属层图案和阻挡层图案。 保护层图案可以覆盖每个布线图案的顶表面，并且包括相对于氧具有高反应性的材料。 保护层图案可以覆盖每个布线图案的顶表面，并且包括相对于氧具有高反应性的材料。

公开(公告)号：US09443932B2

公开(公告)日：2016-09-13

申请号：US14330777

申请日：2014-07-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ki-Chul Kim ,  Joonghan Shin ,  Bongjin Kuh ,  Taegon Kim ,  Hanmei Choi

IPC: H01L21/70 ,  H01L29/06 ,  H01L27/092 ,  H01L21/8238

CPC classification number: H01L29/0696 ,  H01L21/823807 ,  H01L21/845 ,  H01L27/092 ,  H01L27/1211

Abstract: Provided are a semiconductor device and a method of fabricating the same. The semiconductor device may include a plurality of unit cells provided on a semiconductor substrate. Each of the unit cells may include a buried insulating pattern buried in the semiconductor substrate, a first active pattern provided on the buried insulating pattern, and a second active pattern provided on the buried insulating pattern and spaced apart from the first active pattern. The buried insulating pattern may define a unit cell region, in which each of the unit cells may be disposed.

Abstract translation: 提供半导体器件及其制造方法。 半导体器件可以包括设置在半导体衬底上的多个单元电池。 每个单电池可以包括埋在半导体衬底中的掩埋绝缘图案，设置在掩埋绝缘图案上的第一有源图案和设置在掩埋绝缘图案上并与第一有源图案间隔开的第二有源图案。 埋置的绝缘图案可以限定单位单元区域，其中可以布置每个单位单元。

公开(公告)号：US09281277B2

公开(公告)日：2016-03-08

申请号：US14527842

申请日：2014-10-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong-Min Baek ,  Sang-Ho Rha ,  Woo-Kyung You ,  Sang-Hoon Ahn ,  Nae-In Lee ,  Ki-Chul Kim ,  Jeon-Il Lee

IPC: H01L23/528 ,  H01L23/532 ,  H01L21/768 ,  H01L23/522

CPC classification number: H01L23/53238 ,  H01L21/7682 ,  H01L21/76834 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76879 ,  H01L21/76883 ,  H01L23/5222 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53223 ,  H01L23/53266 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2221/1063 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A wiring structure includes a first insulation layer, a plurality of wiring patterns, a protection layer pattern and a second insulation layer. The first insulation layer may be formed on a substrate. A plurality of wiring patterns may be formed on the first insulation layer, and each of the wiring patterns may include a metal layer pattern and a barrier layer pattern covering a sidewall and a bottom surface of the metal layer pattern. The protection layer pattern may cover a top surface of each of the wiring patterns and including a material having a high reactivity with respect to oxygen. The protection layer pattern may cover a top surface of each of the wiring patterns and including a material having a high reactivity with respect to oxygen.

Abstract translation: 布线结构包括第一绝缘层，多个布线图案，保护层图案和第二绝缘层。 第一绝缘层可以形成在基板上。 可以在第一绝缘层上形成多个布线图案，并且每个布线图案可以包括覆盖金属层图案的侧壁和底表面的金属层图案和阻挡层图案。 保护层图案可以覆盖每个布线图案的顶表面，并且包括相对于氧具有高反应性的材料。 保护层图案可以覆盖每个布线图案的顶表面，并且包括相对于氧具有高反应性的材料。