发明申请
- 专利标题： Power Semiconductor Device with Temperature Protection
- 专利标题（中）： 具有温度保护功能的半导体器件
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申请号： US14920374申请日： 2015-10-22
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公开(公告)号： US20160133620A1公开(公告)日： 2016-05-12
- 发明人: Daniel Pedone , Hans-Joachim Schulze , Rolf Gerlach , Christian Kasztelan , Anton Mauder , Hubert Rothleitner , Wolfgang Scholz , Philipp Seng , Peter Tuerkes
- 申请人： Infineon Technologies Austria AG
- 优先权： DE102014115464.9 20141023
- 主分类号： H01L27/02
- IPC分类号： H01L27/02 ; H01L21/8234 ; H01L29/866 ; H01L21/8249 ; H01L27/06 ; H01L29/739
摘要：
A temperature protected power semiconductor device has a substrate which includes a power field effect transistor (FET) and a thermosensitive element. The power FET has a gate electrode connected to a gate, a drift region, and first and second terminals for a load current. The load current is controllable during operation by a voltage applied between the gate and the first terminal. The thermosensitive element has a first contact connected to one of the gate electrode and first terminal of the power FET, and a second contact connected to the other one of the gate electrode and first terminal. The thermosensitive element is located close to the power FET and thermally coupled thereto. The thermosensitive element is configured to cause the power FET to reduce the load current in case of an exceedance of a limit temperature of the power FET, by interconnecting the gate and first terminal.
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