公开(公告)号：US11276680B2

公开(公告)日：2022-03-15

申请号：US14920374

申请日：2015-10-22

申请人： Infineon Technologies Austria AG

发明人： Daniel Pedone ,  Hans-Joachim Schulze ,  Rolf Gerlach ,  Christian Kasztelan ,  Anton Mauder ,  Hubert Rothleitner ,  Wolfgang Scholz ,  Philipp Seng ,  Peter Tuerkes

IPC分类号： H01L27/02 ,  H01L27/06 ,  H01L29/739 ,  H01L29/866 ,  H01L21/8249

摘要： A temperature protected power semiconductor device has a substrate which includes a power field effect transistor (FET) and a thermosensitive element. The power FET has a gate electrode connected to a gate, a drift region, and first and second terminals for a load current. The load current is controllable during operation by a voltage applied between the gate and the first terminal. The thermosensitive element has a first contact connected to one of the gate electrode and first terminal of the power FET, and a second contact connected to the other one of the gate electrode and first terminal. The thermosensitive element is located close to the power FET and thermally coupled thereto. The thermosensitive element is configured to cause the power FET to reduce the load current in case of an exceedance of a limit temperature of the power FET, by interconnecting the gate and first terminal.

公开(公告)号：US20160133620A1

公开(公告)日：2016-05-12

申请号：US14920374

申请日：2015-10-22

申请人： Infineon Technologies Austria AG

发明人： Daniel Pedone ,  Hans-Joachim Schulze ,  Rolf Gerlach ,  Christian Kasztelan ,  Anton Mauder ,  Hubert Rothleitner ,  Wolfgang Scholz ,  Philipp Seng ,  Peter Tuerkes

IPC分类号： H01L27/02 ,  H01L21/8234 ,  H01L29/866 ,  H01L21/8249 ,  H01L27/06 ,  H01L29/739

CPC分类号： H01L27/0259 ,  H01L21/8249 ,  H01L27/0255 ,  H01L27/0623 ,  H01L27/0629 ,  H01L29/7393 ,  H01L29/7397 ,  H01L29/866

摘要： A temperature protected power semiconductor device has a substrate which includes a power field effect transistor (FET) and a thermosensitive element. The power FET has a gate electrode connected to a gate, a drift region, and first and second terminals for a load current. The load current is controllable during operation by a voltage applied between the gate and the first terminal. The thermosensitive element has a first contact connected to one of the gate electrode and first terminal of the power FET, and a second contact connected to the other one of the gate electrode and first terminal. The thermosensitive element is located close to the power FET and thermally coupled thereto. The thermosensitive element is configured to cause the power FET to reduce the load current in case of an exceedance of a limit temperature of the power FET, by interconnecting the gate and first terminal.

摘要翻译： 温度保护功率半导体器件具有包括功率场效应晶体管（FET）和热敏元件的衬底。 功率FET具有连接到栅极，漂移区域的栅极电极和用于负载电流的第一和第二端子。 通过施加在栅极和第一端子之间的电压在工作期间负载电流是可控的。 热敏元件具有连接到功率FET的栅极电极和第一端子中的一个的第一触点，以及连接到栅电极和第一端子中的另一个的第二触点。 热敏元件靠近功率FET并与其热耦合。 热敏元件被配置为通过互连栅极和第一端子而使功率FET在功率FET的极限温度超过的情况下减小负载电流。