发明申请
- 专利标题： METHOD OF FORMING RECESS STRUCTURE
- 专利标题（中）： 形成结构的方法
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申请号： US14558746申请日： 2014-12-03
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公开(公告)号： US20160163829A1公开(公告)日： 2016-06-09
- 发明人: Kuan-Hsuan Ku , Jhen-Cyuan Li , Shui-Yen Lu
- 申请人： UNITED MICROELECTRONICS CORP.
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L21/02 ; H01L21/308 ; H01L21/311 ; H01L21/3065
摘要：
The present invention is a method of forming a recess structure. First of all, a substrate is provided, and a first ARC layer is entirely formed on the substrate, covering a first region and a second region thereof. Then, the first ARC layer in the second region is etched with a CH-based gas. Then, a first removing process is performed to form a first recess in the second region. Next, a second ARC layer is entirely formed on the substrate, covering the first region and the second region. Then, the second ARC layer in the first region is etched, also with the CH-based gas, and the CH-based gas includes at least one of CH4, C2H4, C3H6, CHF3, CH2F2, and CH3F. Finally, a second removing process is performed to form a second recess in the first region.
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