公开(公告)号：US10483158B2

公开(公告)日：2019-11-19

申请号：US16226498

申请日：2018-12-19

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Po-Wen Su ,  Hsuan-Tai Hsu ,  Kuan-Hsuan Ku

IPC: H01L21/768 ,  H01L29/417 ,  H01L23/522 ,  H01L21/311 ,  H01L29/66 ,  H01L29/08 ,  H01L29/78 ,  H01L29/165

Abstract: A method of fabricating a contact hole structure includes providing a substrate with an epitaxial layer embedded therein. Next, an interlayer dielectric is formed to cover the substrate. After that, a first hole is formed in the interlayer dielectric and the epitaxial layer. Later, a mask layer is formed to cover a sidewall of the first hole and expose a bottom of the first hole. Subsequently, a second hole is formed by etching the epitaxial layer at the bottom of the first hole and taking the mask layer and the interlayer dielectric as a mask, wherein the first hole and the second hole form a contact hole. Then, the mask layer is removed. Finally, a silicide layer is formed to cover the contact hole.

公开(公告)号：US20190122920A1

公开(公告)日：2019-04-25

申请号：US16226498

申请日：2018-12-19

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Po-Wen Su ,  Hsuan-Tai Hsu ,  Kuan-Hsuan Ku

IPC: H01L21/768 ,  H01L29/417 ,  H01L23/522 ,  H01L21/311

Abstract: A method of fabricating a contact hole structure includes providing a substrate with an epitaxial layer embedded therein. Next, an interlayer dielectric is formed to cover the substrate. After that, a first hole is formed in the interlayer dielectric and the epitaxial layer. Later, a mask layer is formed to cover a sidewall of the first hole and expose a bottom of the first hole. Subsequently, a second hole is formed by etching the epitaxial layer at the bottom of the first hole and taking the mask layer and the interlayer dielectric as a mask, wherein the first hole and the second hole form a contact hole. Then, the mask layer is removed. Finally, a silicide layer is formed to cover the contact hole.

公开(公告)号：US10199260B1

公开(公告)日：2019-02-05

申请号：US15726358

申请日：2017-10-05

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Po-Wen Su ,  Hsuan-Tai Hsu ,  Kuan-Hsuan Ku

IPC: H01L21/768 ,  H01L29/417 ,  H01L23/522 ,  H01L21/311

Abstract: A method of fabricating a contact hole structure includes providing a substrate with an epitaxial layer embedded therein. Next, an interlayer dielectric is formed to cover the substrate. After that, a first hole is formed in the interlayer dielectric and the epitaxial layer. Later, a mask layer is formed to cover a sidewall of the first hole and expose a bottom of the first hole. Subsequently, a second hole is formed by etching the epitaxial layer at the bottom of the first hole and taking the mask layer and the interlayer dielectric as a mask, wherein the first hole and the second hole form a contact hole. Then, the mask layer is removed. Finally, a silicide layer is formed to cover the contact hole.

公开(公告)号：US20160163829A1

公开(公告)日：2016-06-09

申请号：US14558746

申请日：2014-12-03

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Kuan-Hsuan Ku ,  Jhen-Cyuan Li ,  Shui-Yen Lu

IPC: H01L29/66 ,  H01L21/02 ,  H01L21/308 ,  H01L21/311 ,  H01L21/3065

CPC classification number: H01L29/66795 ,  H01L21/3065 ,  H01L21/3086 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/823431 ,  H01L29/7851

Abstract: The present invention is a method of forming a recess structure. First of all, a substrate is provided, and a first ARC layer is entirely formed on the substrate, covering a first region and a second region thereof. Then, the first ARC layer in the second region is etched with a CH-based gas. Then, a first removing process is performed to form a first recess in the second region. Next, a second ARC layer is entirely formed on the substrate, covering the first region and the second region. Then, the second ARC layer in the first region is etched, also with the CH-based gas, and the CH-based gas includes at least one of CH4, C2H4, C3H6, CHF3, CH2F2, and CH3F. Finally, a second removing process is performed to form a second recess in the first region.

Abstract translation: 本发明是一种形成凹陷结构的方法。 首先，提供基板，并且第一ARC层完全形成在基板上，覆盖其第一区域和第二区域。 然后，用基于CH的气体蚀刻第二区域中的第一ARC层。 然后，执行第一去除处理以在第二区域中形成第一凹部。 接下来，第二ARC层完全形成在基板上，覆盖第一区域和第二区域。 然后，也蚀刻第一区域中的第二ARC层，并且基于CH的气体，CH基气体包括CH 4，C 2 H 4，C 3 H 6，CHF 3，CH 2 F 2和CH 3 F中的至少一种。 最后，执行第二移除处理以在第一区域中形成第二凹部。