Invention Application
- Patent Title: SEMICONDUCTOR ARRANGEMENT
- Patent Title (中): 半导体安排
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Application No.: US14879394Application Date: 2015-10-09
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Publication No.: US20160172451A1Publication Date: 2016-06-16
- Inventor: Thomas Igel-Holtzendorff , Reza Behtash , Tim Boettcher
- Applicant: NXP B.V.
- Priority: EP14197250.5 20141210
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L21/02 ; H01L21/3105 ; H01L21/321
Abstract:
A semiconductor arrangement comprising a substrate having a first trench formed therein, a field plate layer arranged to extend within the first trench and coat the first trench, the field plate layer having a thickness such that it defines a second trench within the first trench, a barrier layer arranged to coat an internal surface of the second trench; and a trench fill material configured to substantially planarize the first and second trenches.
Public/Granted literature
- US10056459B2 Semiconductor arrangement Public/Granted day:2018-08-21
Information query
IPC分类:
