公开(公告)号：US09735290B2

公开(公告)日：2017-08-15

申请号：US14984880

申请日：2015-12-30

Applicant: NXP B.V.

Inventor： Tim Boettcher ,  Jan Philipp Fischer ,  Thomas Igel-Holtzendorff

IPC: H01L29/66 ,  H01L29/861 ,  H01L29/40 ,  H01L29/872 ,  H01L29/06 ,  H01L29/165

CPC classification number: H01L29/8611 ,  H01L29/0619 ,  H01L29/165 ,  H01L29/407 ,  H01L29/66136 ,  H01L29/66143 ,  H01L29/8613 ,  H01L29/872 ,  H01L29/8725

Abstract: An integrated diode (100) comprising a substrate (102); a Schottky cell (104) on the substrate (102); a heterojunction cell (106) on the substrate (102); a common anode contact (108) for both the Schottky cell (104) and the heterojunction cell (106); and a common cathode contact (110) for both the Schottky cell (104) and the heterojunction cell (106).

公开(公告)号：US20160225918A1

公开(公告)日：2016-08-04

申请号：US14984880

申请日：2015-12-30

Applicant: NXP B.V.

Inventor： Tim Boettcher ,  Jan Philipp Fischer ,  Thomas Igel-Holtzendorff

IPC: H01L29/861 ,  H01L29/165 ,  H01L29/872

CPC classification number: H01L29/8611 ,  H01L29/0619 ,  H01L29/165 ,  H01L29/407 ,  H01L29/66136 ,  H01L29/66143 ,  H01L29/8613 ,  H01L29/872 ,  H01L29/8725

Abstract: An integrated diode (100) comprising a substrate (102); a Schottky cell (104) on the substrate (102); a heterojunction cell (106) on the substrate (102); a common anode contact (108) for both the Schottky cell (104) and the heterojunction cell (106); and a common cathode contact (110) for both the Schottky cell (104) and the heterojunction cell (106).

Abstract translation: 一种集成二极管（100），包括衬底（102）; 在衬底（102）上的肖特基电池（104）; 衬底（102）上的异质结电池（106）; 用于肖特基电池（104）和异质结电池（106）的公共阳极触点（108）; 以及用于肖特基电池（104）和异质结电池（106）的公共阴极接触（110）。

公开(公告)号：US20160020296A1

公开(公告)日：2016-01-21

申请号：US14714927

申请日：2015-05-18

Applicant: NXP B.V.

Inventor： Godefridus Adrianus Maria Hurkx ,  Jeroen Antoon Croon ,  Johannes Josephus Theodorus Marinus Donkers ,  Jan Sonsky ,  Stephen John Sque ,  Andreas Bernardus Maria Jansman ,  Markus Mueller ,  Stephan Heil ,  Tim Boettcher

IPC: H01L29/47 ,  H01L21/02 ,  H01L29/40

CPC classification number: H01L29/475 ,  H01L21/02362 ,  H01L21/0254 ,  H01L29/2003 ,  H01L29/401 ,  H01L29/417 ,  H01L29/42316 ,  H01L29/7787 ,  H01L29/7788 ,  H01L29/872

Abstract: Disclosed is a semiconductor device comprising a group 13 nitride heterojunction comprising a first layer having a first bandgap and a second layer having a second bandgap, wherein the first layer is located between a substrate and the second layer; and a Schottky electrode and a first further electrode each conductively coupled to a different area of the heterojunction, said Schottky electrode comprising a central region and an edge region, wherein the element comprises a conductive barrier portion located underneath said edge region only of the Schottky electrode for locally increasing the Schottky barrier of the Schottky electrode. A method of manufacturing such a semiconductor device is also disclosed.

公开(公告)号：US09064847B2

公开(公告)日：2015-06-23

申请号：US13895228

申请日：2013-05-15

Applicant: NXP B.V.

Inventor： Godefridus Andrianus Maria Hurkx ,  Jeroen Antoon Croon ,  Johannes Josephus Theodorus Marinus Donkers ,  Jan Sonsky ,  Stephen John Sque ,  Andreas Bernardus Maria Jansman ,  Markus Mueller ,  Stephan Heil ,  Tim Boettcher

IPC: H01L29/47 ,  H01L29/417 ,  H01L29/423 ,  H01L29/778 ,  H01L29/872 ,  H01L29/40 ,  H01L21/02 ,  H01L29/20

CPC classification number: H01L29/475 ,  H01L21/02362 ,  H01L21/0254 ,  H01L29/2003 ,  H01L29/401 ,  H01L29/417 ,  H01L29/42316 ,  H01L29/7787 ,  H01L29/7788 ,  H01L29/872

Abstract: Disclosed is a semiconductor device comprising a group 13 nitride heterojunction comprising a first layer having a first bandgap and a second layer having a second bandgap, wherein the first layer is located between a substrate and the second layer; and a Schottky electrode and a first further electrode each conductively coupled to a different area of the heterojunction, said Schottky electrode comprising a central region and an edge region, wherein the element comprises a conductive barrier portion located underneath said edge region only of the Schottky electrode for locally increasing the Schottky barrier of the Schottky electrode. A method of manufacturing such a semiconductor device is also disclosed.

Abstract translation: 公开了一种包括13族氮化物异质结的半导体器件，其包括具有第一带隙的第一层和具有第二带隙的第二层，其中第一层位于衬底和第二层之间; 以及肖特基电极和第一另外的电极，每个导体耦合到所述异质结的不同区域，所述肖特基电极包括中心区域和边缘区域，其中所述元件包括仅位于所述肖特基电极的所述边缘区域下方的导电阻挡部分 用于局部增加肖特基电极的肖特基势垒。 还公开了制造这种半导体器件的方法。

公开(公告)号：US09461183B2

公开(公告)日：2016-10-04

申请号：US14499654

申请日：2014-09-29

Applicant: NXP B.V.

Inventor： Tim Boettcher ,  Jan Fischer

IPC: H01L29/15 ,  H01L31/0312 ,  H01L29/872 ,  H01L29/165 ,  H01L21/283 ,  H01L29/66 ,  H01L29/861 ,  H01L29/161 ,  H01L29/40 ,  H01L29/45 ,  H01L29/47

CPC classification number: H01L29/8725 ,  H01L21/283 ,  H01L29/161 ,  H01L29/165 ,  H01L29/401 ,  H01L29/407 ,  H01L29/45 ,  H01L29/47 ,  H01L29/66136 ,  H01L29/66143 ,  H01L29/861 ,  H01L29/872

Abstract: A diode comprising a reduced surface field effect trench structure, the reduced surface field effect trench structure comprising at least two trenches formed in a substrate and separated from one another by a joining region of the substrate, the joining region comprising an electrical contact and a layer of p-doped semiconductor material.

Abstract translation: 一种包括减小的表面场效应沟槽结构的二极管，所述减小的表面场效应沟槽结构包括形成在衬底中的至少两个沟槽，并且由衬底的接合区域彼此分离，所述接合区域包括电接触和层 的p掺杂半导体材料。

公开(公告)号：US20160172451A1

公开(公告)日：2016-06-16

申请号：US14879394

申请日：2015-10-09

Applicant: NXP B.V.

Inventor： Thomas Igel-Holtzendorff ,  Reza Behtash ,  Tim Boettcher

IPC: H01L29/40 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/321

CPC classification number: H01L29/407 ,  H01L21/02255 ,  H01L21/02271 ,  H01L21/28017 ,  H01L21/31051 ,  H01L21/32115 ,  H01L29/401 ,  H01L29/4236 ,  H01L29/7813 ,  H01L29/861

Abstract: A semiconductor arrangement comprising a substrate having a first trench formed therein, a field plate layer arranged to extend within the first trench and coat the first trench, the field plate layer having a thickness such that it defines a second trench within the first trench, a barrier layer arranged to coat an internal surface of the second trench; and a trench fill material configured to substantially planarize the first and second trenches.

Abstract translation: 一种半导体装置，包括其中形成有第一沟槽的衬底，场板层布置成在第一沟槽内延伸并涂覆第一沟槽，场板层具有使得其在第一沟槽内限定第二沟槽的厚度， 阻挡层，布置成涂覆第二沟槽的内表面; 以及沟槽填充材料，其构造成基本上平坦化所述第一和第二沟槽。

公开(公告)号：US08981566B2

公开(公告)日：2015-03-17

申请号：US13890055

申请日：2013-05-08

Applicant: NXP B.V.

Inventor： Tim Boettcher ,  Sven Walczyk ,  Roelf Anco Jacob Groenhuis ,  Rolf Brenner ,  Emiel De Bruin

IPC: H01L23/48 ,  H01L23/00 ,  H01L25/065 ,  H01L25/00

CPC classification number: H01L21/78 ,  H01L21/56 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/12 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0346 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/04105 ,  H01L2224/05016 ,  H01L2224/05088 ,  H01L2224/051 ,  H01L2224/05111 ,  H01L2224/05147 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05582 ,  H01L2224/05611 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/06181 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/20 ,  H01L2224/291 ,  H01L2224/32105 ,  H01L2224/32113 ,  H01L2224/32237 ,  H01L2224/33181 ,  H01L2224/9202 ,  H01L2224/94 ,  H01L2224/96 ,  H01L2225/06513 ,  H01L2225/06565 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/12036 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2224/03 ,  H01L2224/81 ,  H01L2224/05552

Abstract: Disclosed is a discrete semiconductor device package (100) comprising a semiconductor die (110) having a first surface and a second surface opposite said first surface carrying a contact (112); a conductive body (120) on said contact; an encapsulation material (130) laterally encapsulating said conductive body; and a capping member (140, 610) such as a solder cap, a further semiconductor die or a combination thereof in conductive contact with the solder portion, said solder cap extending over the encapsulation material. A further solder cap (150) may be provided over the first surface. A method of manufacturing such a discrete semiconductor device package is also disclosed.

Abstract translation: 公开了一种分立半导体器件封装（100），包括半导体管芯（110），其具有第一表面和与所述第一表面相对的第二表面，所述第二表面承载触点（112）; 所述接触件上的导电体（120）; 横向封装所述导电体的封装材料（130） 以及与焊料帽导电接触的诸如焊料帽，另外的半导体管芯或其组合的封盖构件（140,610），所述焊帽覆盖在封装材料上。 可以在第一表面上设置另外的焊锡帽（150）。 还公开了制造这种分立半导体器件封装的方法。

公开(公告)号：US09911816B2

公开(公告)日：2018-03-06

申请号：US14693756

申请日：2015-04-22

Applicant: NXP B.V.

Inventor： Tim Boettcher ,  Reza Behtash ,  Thomas Igel-Holtzendorff ,  Linpei Zhu

IPC: H01L29/40 ,  H01L29/06 ,  H01L21/67 ,  H01L29/66 ,  H01L29/872

CPC classification number: H01L29/404 ,  H01L21/67069 ,  H01L29/063 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/66143 ,  H01L29/8725

Abstract: A semiconductive device comprising a body having: a first surface and an opposing second surface; a first semiconductive layer adjacent to the first surface; an active region comprising: a plurality of active trenches in the first surface, extending from the first surface into the first semiconductive layer, and having an active trench width, and a plurality of active cells; and a termination region at a periphery of the first surface comprising: at least one termination trench extending from the first surface into the first semiconductive layer, wherein the termination region has a width that is greater than the active trench width; and a number of termination trench separators having a width that is less than a width of the active cells, wherein the active trenches and the at least one termination trench each comprise a first insulator layer adjacent to the first semiconductive layer of the body.

公开(公告)号：US09418918B2

公开(公告)日：2016-08-16

申请号：US14667979

申请日：2015-03-25

Applicant: NXP B.V.

Inventor： Roelf Anco Jacob Groenhuis ,  Tim Boettcher

IPC: H01L23/495 ,  H01L23/00

CPC classification number: H01L23/49524 ,  H01L23/49562 ,  H01L24/37 ,  H01L24/40 ,  H01L24/84 ,  H01L2224/352 ,  H01L2224/37011 ,  H01L2224/37013 ,  H01L2224/37147 ,  H01L2224/37611 ,  H01L2224/37639 ,  H01L2224/4007 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/84801 ,  H01L2924/00014

Abstract: There is disclosed a lead for connection to a semiconductor device die, the lead comprising a clip portion. The clip portion comprises a major surface having two or more protrusions extending therefrom for connection to a bond pad of the semiconductor device die.

Abstract translation: 公开了一种用于连接到半导体器件裸片的引线，该引线包括夹持部分。 夹持部分包括具有从其延伸的两个或更多个突起的主表面，用于连接到半导体器件裸片的接合焊盘。

公开(公告)号：US09349819B2

公开(公告)日：2016-05-24

申请号：US14714927

申请日：2015-05-18

Applicant: NXP B.V.

Inventor： Godefridus Adrianus Maria Hurkx ,  Jeroen Antoon Croon ,  Johannes Josephus Theodorus Marinus Donkers ,  Jan Sonsky ,  Stephen John Sque ,  Andreas Bernardus Maria Jansman ,  Markus Mueller ,  Stephan Heil ,  Tim Boettcher

IPC: H01L29/20 ,  H01L21/02 ,  H01L29/47 ,  H01L29/417 ,  H01L29/423 ,  H01L29/778 ,  H01L29/872 ,  H01L29/40

CPC classification number: H01L29/475 ,  H01L21/02362 ,  H01L21/0254 ,  H01L29/2003 ,  H01L29/401 ,  H01L29/417 ,  H01L29/42316 ,  H01L29/7787 ,  H01L29/7788 ,  H01L29/872

Abstract: Disclosed is a semiconductor device comprising a group 13 nitride heterojunction comprising a first layer having a first bandgap and a second layer having a second bandgap, wherein the first layer is located between a substrate and the second layer; and a Schottky electrode and a first further electrode each conductively coupled to a different area of the heterojunction, said Schottky electrode comprising a central region and an edge region, wherein the element comprises a conductive barrier portion located underneath said edge region only of the Schottky electrode for locally increasing the Schottky barrier of the Schottky electrode. A method of manufacturing such a semiconductor device is also disclosed.

Abstract translation: 公开了一种包括13族氮化物异质结的半导体器件，其包括具有第一带隙的第一层和具有第二带隙的第二层，其中第一层位于衬底和第二层之间; 以及肖特基电极和第一另外的电极，每个导体耦合到所述异质结的不同区域，所述肖特基电极包括中心区域和边缘区域，其中所述元件包括仅位于所述肖特基电极的所述边缘区域下方的导电阻挡部分 用于局部增加肖特基电极的肖特基势垒。 还公开了制造这种半导体器件的方法。