Invention Application
US20160172456A1 HIGH RESISTANCE METAL ETCH-STOP PLATE FOR METAL FLYOVER LAYER
审中-公开
用于金属飞溅层的高电阻金属蚀刻板
- Patent Title: HIGH RESISTANCE METAL ETCH-STOP PLATE FOR METAL FLYOVER LAYER
- Patent Title (中): 用于金属飞溅层的高电阻金属蚀刻板
-
Application No.: US14567925Application Date: 2014-12-11
-
Publication No.: US20160172456A1Publication Date: 2016-06-16
- Inventor: Xia Li , John Jianhong Zhu , Jeffrey Junhao Xu , Bin Yang , Jun Yuan , Yu Lu
- Applicant: QUALCOMM Incorporated
- Main IPC: H01L29/417
- IPC: H01L29/417 ; H01L21/283
Abstract:
A semiconductor device includes a transistor having a metal gate, a source, and a drain. The semiconductor device also includes a high resistance metal etch-stop layer positioned above the metal gate of the transistor. The semiconductor device also includes a metal layer formed on the high resistance metal etch-stop layer. The metal layer is positioned above at least one of the source of the transistor or the drain of the transistor.
Information query
IPC分类:
