Invention Application
- Patent Title: SEMICONDUCTOR LASER DEVICE AND MANUFACTURING METHOD THEREOF, AND SUBMOUNT MANUFACTURING METHOD
- Patent Title (中): 半导体激光器件及其制造方法及其制造方法
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Application No.: US15057770Application Date: 2016-03-01
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Publication No.: US20160181760A1Publication Date: 2016-06-23
- Inventor: Hiroki SAKATA , Hiroaki YUTO , Eiichiro OKAHISA , Kazuma KOZURU
- Applicant: NICHIA CORPORATION
- Priority: JP2013-094807 20130427
- Main IPC: H01S5/024
- IPC: H01S5/024 ; H01S5/022
Abstract:
A semiconductor laser device can include an insulating single crystal SiC having a first surface, a second surface, and micropipes having openings in the first surface and the second surface. A conductive base can be provided on a side of the first surface of the single crystal SiC, and a semiconductor laser element can be provided on a side of the second surface of the single crystal SiC. An insulating member can be formed in the micropipes.
Public/Granted literature
- US09496680B2 Semiconductor laser device and manufacturing method thereof, and submount manufacturing method Public/Granted day:2016-11-15
Information query
