公开(公告)号：US20210332475A1

公开(公告)日：2021-10-28

申请号：US17230763

申请日：2021-04-14

Applicant: NICHIA CORPORATION

Inventor： Naoki EBOSHI ,  Hiroaki YUTO ,  Hiroki SAKATA ,  Toshiaki YAMASHITA ,  Akinori HARA

IPC: C23C14/58 ,  H01S5/0225 ,  F21V7/26 ,  C23C14/14

Abstract: A method for manufacturing a wavelength conversion member, includes: providing a wavelength conversion layer having a phosphor-containing portion and a light reflecting portion surrounding the phosphor-containing portion, and the wavelength conversion layer having an upper surface, a bottom surface and at least one side surface; forming a light-blocking film on the upper surface of the wavelength conversion layer; and removing a part of the light-blocking film by laser processing to expose at least a part of the phosphor-containing portion from the light-blocking film.

公开(公告)号：US20170077672A1

公开(公告)日：2017-03-16

申请号：US15258868

申请日：2016-09-07

Applicant: NICHIA CORPORATION

Inventor： Hiroki SAKATA ,  Hiroki KOIZUMI

IPC: H01S5/02 ,  H01S5/30 ,  H01S5/042

CPC classification number: H01S5/0202 ,  H01S5/0206 ,  H01S5/0422 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/3013 ,  H01S5/3202 ,  H01S5/34333

Abstract: A method for producing a semiconductor laser element includes providing a semiconductor wafer comprising: a nitride semiconductor substrate, and a semiconductor stack located on the substrate, the semiconductor stack including a plurality of nitride semiconductor layers; forming in the substrate a fissure starting point and a fissure extending from the fissure starting point; forming a cleavage reference portion extending parallel to a cleavage plane of the semiconductor wafer as estimated from a plan view shape of the fissure; and cleaving the semiconductor wafer parallel to the cleavage reference portion to thereby obtain resonator end faces.

Abstract translation: 一种半导体激光元件的制造方法，其特征在于，具备：半导体晶片，其具备：氮化物半导体基板和位于所述基板上的半导体叠层，所述半导体叠层包括多个氮化物半导体层; 在基板上形成裂缝起点和从裂缝起点延伸的裂缝; 形成从所述裂缝的平面图形状估计的平行于所述半导体晶片的解理平面延伸的切割参考部分; 并且将半导体晶片与分割基准部分平行，从而获得谐振器端面。

公开(公告)号：US20250105585A1

公开(公告)日：2025-03-27

申请号：US18895149

申请日：2024-09-24

Applicant: NICHIA CORPORATION

Inventor： Hiroki SAKATA

IPC: H01S5/02255 ,  H01S5/02208 ,  H01S5/02253 ,  H01S5/02355 ,  H01S5/40

Abstract: A plurality of light-emitting devices includes first, second, and third light-emitting devices. The first/second light-emitting device includes a first/second semiconductor laser element configured to emit light of a first/second color having a light emission peak wavelength of a first/second wavelength and a first/second reflective member having a reflectance of 90% or more with respect to the first/second wavelength. The third light-emitting device includes third and fourth semiconductor laser elements configured to emit light of the first and second colors having light emission peak wavelengths of third and fourth wavelengths, respectively, and a plurality of third reflective members having a reflectance of 90% or more with respect to the third wavelength and the fourth wavelength. A reflectance of the third reflective member with respect to light having the first/second wavelength is higher than a reflectance of the second/first reflective member with respect to the light having the first/second wavelength.

公开(公告)号：US20160181760A1

公开(公告)日：2016-06-23

申请号：US15057770

申请日：2016-03-01

Applicant: NICHIA CORPORATION

Inventor： Hiroki SAKATA ,  Hiroaki YUTO ,  Eiichiro OKAHISA ,  Kazuma KOZURU

IPC: H01S5/024 ,  H01S5/022

CPC classification number: H01S5/02469 ,  H01L2224/48091 ,  H01L2924/12044 ,  H01S5/02212 ,  H01S5/02236 ,  H01S5/02256 ,  H01S5/02276 ,  H01S5/02476 ,  H01S5/32341 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A semiconductor laser device can include an insulating single crystal SiC having a first surface, a second surface, and micropipes having openings in the first surface and the second surface. A conductive base can be provided on a side of the first surface of the single crystal SiC, and a semiconductor laser element can be provided on a side of the second surface of the single crystal SiC. An insulating member can be formed in the micropipes.

Abstract translation: 半导体激光器件可以包括具有第一表面，第二表面和在第一表面和第二表面中具有开口的微管的绝缘单晶SiC。 可以在单晶SiC的第一表面的一侧设置导电性基材，并且可以在单晶SiC的第二面的一侧设置半导体激光元件。 可以在微管中形成绝缘构件。

公开(公告)号：US20140321491A1

公开(公告)日：2014-10-30

申请号：US14261520

申请日：2014-04-25

Applicant: NICHIA CORPORATION

Inventor： Hiroki SAKATA ,  Hiroaki YUTO ,  Eiichiro OKAHISA ,  Kazuma KOZURU

IPC: H01S5/02

CPC classification number: H01S5/02469 ,  H01L2224/48091 ,  H01L2924/12044 ,  H01S5/02212 ,  H01S5/02236 ,  H01S5/02256 ,  H01S5/02276 ,  H01S5/02476 ,  H01S5/32341 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A semiconductor laser device can include an insulating single crystal SiC having a first surface, a second surface, and micropipes having openings in the first surface and the second surface. A conductive base can be provided on a side of the first surface of the single crystal SiC, and a semiconductor laser element can be provided on a side of the second surface of the single crystal SiC. An insulating member can be formed in the micropipes.

Abstract translation: 半导体激光器件可以包括具有第一表面，第二表面和在第一表面和第二表面中具有开口的微管的绝缘单晶SiC。 可以在单晶SiC的第一表面的一侧设置导电性基材，并且可以在单晶SiC的第二面的一侧设置半导体激光元件。 可以在微管中形成绝缘构件。