发明申请
US20160204773A1 SYSTEM AND METHOD FOR ANTI-AMBIPOLAR HETEROJUNCTIONS FROM SOLUTION-PROCESSED SEMICONDUCTORS
有权
从解决方案处理的半导体中的抗环状异构体的系统和方法
- 专利标题: SYSTEM AND METHOD FOR ANTI-AMBIPOLAR HETEROJUNCTIONS FROM SOLUTION-PROCESSED SEMICONDUCTORS
- 专利标题(中): 从解决方案处理的半导体中的抗环状异构体的系统和方法
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申请号: US14981245申请日: 2015-12-28
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公开(公告)号: US20160204773A1公开(公告)日: 2016-07-14
- 发明人: Deep M. Jariwala , Vinod K. Sangwan , Weichao Xu , Hyungil Kim , Tobin J. Marks , Mark C. Hersam
- 申请人: NORTHWESTERN UNIVERSITY
- 主分类号: H03K7/06
- IPC分类号: H03K7/06 ; H01L51/05 ; H01L51/10 ; H01L51/00
摘要:
Van der Waals heterojunctions are extended to semiconducting p-type single-walled carbon nanotube (s-SWCNT) and n-type film that can be solution-processed with high spatial uniformity at the wafer scale. The resulting large-area, low-voltage p-n heterojunctions can exhibit anti-ambipolar transfer characteristics with high on/off ratios. The charge transport can be efficiently utilized in analog circuits such as frequency doublers and keying circuits that are widely used, for example, in telecommunication and wireless data transmission technologies.
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