Invention Application
- Patent Title: INTEGRATED CIRCUIT DEVICES AND METHODS
- Patent Title (中): 集成电路设备和方法
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Application No.: US14819159Application Date: 2015-08-05
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Publication No.: US20160211216A1Publication Date: 2016-07-21
- Inventor: Jeffrey Junhao Xu , Junjing BAO , John Jianhong ZHU , Stanley Seungchul SONG , Niladri Narayan MOJUMDER , Choh Fei YEAP
- Applicant: QUALCOMM Incorporated
- Main IPC: H01L23/532
- IPC: H01L23/532 ; G05B19/418 ; H01L21/768 ; B29C67/00 ; H01L23/522 ; H01L23/528
Abstract:
An integrated circuit device includes a first metal layer including aluminum. The integrated circuit device includes a second metal layer including an interconnect structure. The interconnect structure includes a layer of first material including aluminum. The integrated circuit device includes an inter-diffusion layer that includes aluminum. The inter-diffusion layer is proximate to the first metal layer and proximate to the layer of first material including aluminum. The integrated circuit device includes a self-forming barrier layer that includes aluminum. The self-forming barrier layer is proximate to a dielectric layer and proximate to the layer of first material including aluminum.
Public/Granted literature
- US09543248B2 Integrated circuit devices and methods Public/Granted day:2017-01-10
Information query
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