发明申请
- 专利标题： METHOD OF FORMING A SEMICONDUCTOR STRUCTURE
- 专利标题（中）： 形成半导体结构的方法
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申请号： US14629491申请日： 2015-02-24
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公开(公告)号： US20160247678A1公开(公告)日： 2016-08-25
- 发明人: Li-Wei Feng , Shih-Hung Tsai , Chao-Hung Lin , Hon-Huei Liu , An-Chi Liu , Chih-Wei Wu , Jyh-Shyang Jenq , Shih-Fang Hong , En-Chiuan Liou , Ssu-I Fu , Yu-Hsiang Hung , Chih-Kai Hsu , Mei-Chen Chen , Chia-Hsun Tseng
- 申请人： United Microelectronics Corp.
- 主分类号： H01L21/033
- IPC分类号： H01L21/033 ; H01L21/66
摘要：
A method of forming a semiconductor structure includes following steps. First of all, a patterned hard mask layer having a plurality of mandrel patterns is provided. Next, a plurality of first mandrels is formed on a substrate through the patterned hard mask. Following these, at least one sidewall image transferring (SIT) process is performed. Finally, a plurality of fins is formed in the substrate, wherein each of the fins has a predetermined critical dimension (CD), and each of the mandrel patterns has a CD being 5-8 times greater than the predetermined CD.
公开/授权文献
- US09530646B2 Method of forming a semiconductor structure 公开/授权日：2016-12-27
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