Invention Application
- Patent Title: ALIGNED CARBON NANOTUBES FOR USE IN HIGH PERFORMANCE FIELD EFFECT TRANSISTORS
- Patent Title (中): 用于高性能场效应晶体管的对准碳纳米管
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Application No.: US15154170Application Date: 2016-05-13
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Publication No.: US20160254468A1Publication Date: 2016-09-01
- Inventor: Michael Scott Arnold , Padma Gopalan , Gerald Joseph Brady , Yongho Joo
- Applicant: Wisconsin Alumni Research Foundation
- Main IPC: H01L51/05
- IPC: H01L51/05 ; H01L51/00

Abstract:
High density films of semiconducting single-walled carbon nanotubes having a high degree of nanotube alignment are provided. Also provided are methods of making the films and field effect transistors (FETs) that incorporate the films as conducting channel materials. The single-walled carbon nanotubes are deposited from a thin layer of organic solvent containing solubilized single-walled carbon nanotubes that is spread over the surface of an aqueous medium, inducing evaporative self-assembly upon contacting a solid substrate.
Public/Granted literature
- US09728734B2 Aligned carbon nanotubes for use in high performance field effect transistors Public/Granted day:2017-08-08
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