Invention Application
- Patent Title: COMPOSITION FOR FORMING A RESIST UNDERLAYER FILM, AND PATTERN-FORMING METHOD
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Application No.: US15159054Application Date: 2016-05-19
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Publication No.: US20160259247A1Publication Date: 2016-09-08
- Inventor: Fumihiro TOYOKAWA , Shin-ya NAKAFUJI , Gouji WAKAMATSU
- Applicant: JSR CORPORATION
- Applicant Address: JP Tokyo
- Assignee: JSR CORPORATION
- Current Assignee: JSR CORPORATION
- Current Assignee Address: JP Tokyo
- Priority: JP2012-198837 20120910
- Main IPC: G03F7/11
- IPC: G03F7/11 ; H01L21/3105 ; H01L21/3065 ; H01L21/308 ; G03F7/26 ; H01L21/027

Abstract:
A composition for forming a resist underlayer film is provided, which contains: a calixarene-based compound obtained from a calixarene by substituting at least a part of hydrogen atoms each on phenolic hydroxyl groups comprised in the calixarene, with a monovalent organic group having 1 to 30 carbon atoms; and an organic solvent. The monovalent organic group preferably includes a crosslinkable group. A part of hydrogen atoms each on phenolic hydroxyl groups of the calixarene-based compound is preferably substituted. The ratio of the number of substituted phenolic hydroxyl groups to the number of unsubstituted phenolic hydroxyl groups in the calixarene-based compound is preferably no less than 30/70 and no greater than 99/1.
Public/Granted literature
- US09696626B2 Composition for forming a resist underlayer film, and pattern-forming method Public/Granted day:2017-07-04
Information query
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